相关论文: MOSFET GIDL Currentby Designing a New BTBT Model U…

We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture…

Theoretical predictions are made for the current-voltage characteristics of two-dimensional heterojunction interlayer tunneling field-effect transistors (Thin-TFETs), focusing on the magnitude of the current that is achievable in such…

For decades, de Casteljau's algorithm has been used as a fundamental building block in curve and surface design and has found a wide range of applications in fields such as scientific computing, and discrete geometry to name but a few. With…

This paper is devoted to the study of quantum dissipation in cluster decay phenomena in the frame of the Lindblad approach to quantum open systems. The tunneling of a metastable state across a piecewise quadratic potential is envisaged for…

A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…

The quantum mechanical tunneling through multiple quantum barriers is a long-standing and well-known problem. Three methods proposed earlier to calculate the tunneling probabilities and energy splitting: (1). Instanton Method (2) WKb…

The Planar Model of the Electrode-Vacuum-Electrode configuration for STM in which electrode surfaces are assumed to be infinite parallel planes, with atomic size separation and vacuum between them, is used to calculate tunneling current…

We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…

In this paper, the dynamic of inertial capsules into microfluidic bifurcations is studied. The fluid evolution is based on the solution of the BGK -- lattice Boltzmann scheme including a forcing term accounting for immersed geometries. The…

In the tight binding model with multiple degenerate vacua we might treat wave function overlaps as instanton tunnelings between different wells (vacua). An amplitude for such a tunneling process might be constructed as $\mathsf{T}_{i\to…

Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G) vertical structures. Detailed comparison with prior…

Electron's tunneling through potential barrier in monolayer and bilayer graphene lattices is investigated by using full tight-binding model. Emphasis is placed on the resonance tunneling feature and inter-valley scattering probability. It…

Bezier parametric patches are used in engineering practice quite often, especially in CAD/CAM systems oriented to mechanical design. In many cases quadrilateral meshes are used for tessellation of parameters domain. We propose a new…

We formulate a procedure to obtain a gauge-invariant tunneling rate at zero temperature using the recently developed tunneling potential approach. This procedure relies on a consistent power counting in gauge coupling and a derivative…

In twisted bilayer graphene (TBLG), chiral tunneling can be tuned by parameters such as the twist angle, barrier height, and Fermi energy. This differs from the tunneling behavior observed in monolayer and Bernal bilayer graphene, where…

In computer aided geometric design a polynomial is usually represented in Bernstein form. The de Casteljau algorithm is the most well-known algorithm for evaluating a polynomial in this form. Evaluation via the de Casteljau algorithm has…

In this work, we have investigated a 2D model of band-to-band tunneling based on 2-band model and implemented it using 2D NEGF formalism. Being 2D in nature, this model better addresses the variation in the directionality of the tunneling…

The purpose of this article is to present an accurate way, based on a physical description, to simulate Coulomb blockade devices. The method underlying the simulations depends only on fundamental parameters of the system and does not…

The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the…

We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but…