相关论文: MOSFET GIDL Currentby Designing a New BTBT Model U…
The new method for the simulation of nonstationary quantum processes is proposed. The method is based on the tomography representation of quantum mechanics, {\it i.e.}, the state of the system is described by the {\it nonnegative} function…
By directly integrating the Schroedinger starting in the transmission region and working backwards through the barrier, the tunneling probability can be determined for arbitrary potential barriers. The method employs techniques familiar to…
We investigate quantum tunneling of charge carriers through a periodic superlattice in twisted bilayer graphene (TBG) with rectangular potential barriers, including the presence of a defect, using a low-energy continuum model. Transmission…
Tunneling from a two-dimensional contact into quantum-Hall edges is considered theoretically for a case where the barrier is extended, uniform, and parallel to the edge. In contrast to previously realized tunneling geometries, details of…
The Gottesman-Knill theorem allows for the efficient simulation of stabilizer-based quantum error-correction circuits. Errors in these circuits are commonly modeled as depolarizing channels by using Monte Carlo methods to insert Pauli gates…
Based on the general form of the master equation for open quantum systems the tunneling is considered. Using the path integral technique a simple closed form expression for the tunneling rate through a parabolic barrier is obtained. The…
Attempts to find a quantum-to-classical correspondence in a classically forbidden region leads to non-physical paths, involving, for example, complex time or spatial coordinates. Here, we identify genuine quasi-classical paths for tunneling…
Quantum tunneling from a thin wire or a thin film through a static potential barrier in a zero magnetic field is studied. The wire or the film should satisfy a condition of transverse quantization of levels and be inhomogeneous. Depending…
Dissipative quantum tunnelling through an inverted parabolic barrier is considered in the presence of an electric field. A Schr\"odinger-Langevin or Kostin quantum classical transition wave equation is used and applied resulting in a scaled…
We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation. We evaluate device behavior using…
We provide a semiclassical theory of tunneling decay in a magnetic field and a three-dimensional potential of a general form. Because of broken time-reversal symmetry, the standard WKB technique has to be modified. The decay rate is found…
We have introduced a controllable nano-scale incursion into a potential barrier imposed across a two-dimensional electron gas, and report on the phenomena that we observe as the incursion develops. In the quantum Hall regime, the…
We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying…
The assisted tunneling of a wave packet between square one dimensional barriers is treated analytically. The tunneling rate is calculated exactly for a potential mimicking a constant electric field with arbitrary time dependence. The pole…
The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to…
We study the quantum tunnel effect through a potential barrier employing a semiclassical formulation of quantum mechanics based on expectation values of configuration variables and quantum dispersions as dynamical variables. The evolution…
We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure. Results are obtained from quantum transport simulations based on Non-Equilibrium…
Tunneling amplitude through magnetic breakdown (MB) gap is considered for two bands Fermi surfaces illustrated in many organic metals. In particular, the S-matrix associated to the wave-function transmission through the MB gap for the…
By taking into account the full four band energy spectrum, we calculate the transmission probability and conductance of electrons across symmetric and asymmetric double potential barrier with a confined interlayer potential difference in…
Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during…