相关论文: Controlled inter-state switching between quantized…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…
In the era of big data and the Internet of Things, quantum-level control of conductance states offers a promising route toward high-density data storage and brain-inspired neuromorphic computing. Although quantum conductance (QC) phenomena…
In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three nonvolatile resistance states.…
We show that, in tantalum oxide resistive memories, activation power provides a multi-level variable for information storage that can be set and read separately from the resistance. These two state variables (resistance and activation…
The functionality of logic and memory elements in current electronics is based on multi-stability, driven either by manipulating local concentrations of electrons in transistors, or by switching between equivalent states of a material with…
We demonstrate experimentally the creation and measurement of an entangled state between a microscopic two level system and a macroscopic superconducting resonator where their indirect interaction is mediated by an artificial atom, a…
Quantum memory is a key element for quantum repeaters and linear optical quantum computers. In addition to memory, repeaters and computers also require manipulating quantum states by means of unitary transformations, which is generally…
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…
The faithful storage and coherent manipulation of quantum states with matter-systems enable the construction of large-scale quantum networks based on quantum repeater. To achieve useful communication rates, highly multimode quantum memories…
Controllable quantized conductance states of TiN/Ti/HfO$_x$/TiN memristors are realized with great precision through a pulse-mode reset procedure, assisted with analytical differentiation of the condition of the set procedure, which…
Quantum reservoir computing (QRC) offers a promising framework for online quantum-enhanced machine learning tailored to temporal tasks, yet practical implementations with native memory capabilities remain limited. Here, we demonstrate an…
Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…
Quantum battery (QB) is the energy storage and extraction device that is governed by the principles of quantum mechanics. Here we propose a three-level Dicke QB and investigate its charging process by considering three quantum optical…
Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent non-integer conductance (in terms of conductance…
Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the…
In superconducting quantum information, machined aluminum superconducting cavities have proven to be a well-controlled, low-dissipation electromagnetic environment for quantum circuits such as qubits. They can possess large internal quality…
Deterministically controllable multi-state polarizations in ferroelectric materials are promising for the application of next-generation non-volatile multi-state memory devices. However, the achievement of multi-state polarizations has been…
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…
Quantum dots (QDs) investigated through electron transport measurements often exhibit varying, state-dependent tunnel couplings to the leads. Under specific conditions, weakly coupled states can result in a strong suppression of the…
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…