We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.
@article{arxiv.1310.3613,
title = {Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit},
author = {P. Stoliar and P. Levy and M. J. Sánchez and A. G. Leyva and C. A. Albornoz and F. Gomez-Marlasca and A. Zanini and C. Toro Salazar and N. Ghenzi and M. J. Rozenberg},
journal= {arXiv preprint arXiv:1310.3613},
year = {2013}
}
Comments
Accepted for publication in the IEEE Transactions on CAS II