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Multi-level Resistive Switching Characteristics of W/Co:TiO2/FTO Structures

Materials Science 2015-09-29 v1
Authors: Haitao Tang , Zhi Luo , Zhao Yang , Bin Yang , Bo Huang , Weiguang Xie
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Abstract

In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three nonvolatile resistance states. And the directly switching between any resistance states was realized. This increases the operation speed and lowers the complexity of control circuit of multi-state nonvolatile memory.

Keywords

resistive switching multi-level nonvolatile memory Co:TiO2 W/Co:TiO2/FTO structure

Cite

@article{arxiv.1509.08211,
  title  = {Multi-level Resistive Switching Characteristics of W/Co:TiO2/FTO Structures},
  author = {Haitao Tang and Zhi Luo and Zhao Yang and Bin Yang and Bo Huang and Weiguang Xie},
  journal= {arXiv preprint arXiv:1509.08211},
  year   = {2015}
}

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