Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO_x nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.
@article{arxiv.1410.2019,
title = {Resistive switching phenomena in TiOx nanoparticle layers for memory applications},
author = {Emanuelle Goren and Mariana Ungureanu and Raul Zazpe and Marcelo Rozenberg and Luis E. Hueso and Pablo Stoliar and Yoed Tsur and Fèlix Casanova},
journal= {arXiv preprint arXiv:1410.2019},
year = {2014}
}