A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we demonstrate highly stable and reproducible quantized conductance states (QC-states) in Al/Niobium oxide/Pt resistive switching devices. Three levels of control over the QC-states, required for multilevel quantized state memories, like, switching ON to different quantized states, switching OFF from quantized states, and controlled inter-state switching among one QC states to another has been demonstrated by imposing limiting conditions of stop-voltage and current compliance. The well defined multiple QC-states along with a working principle for switching among various states show promise for implementation of multilevel memory devices.
@article{arxiv.1903.10688,
title = {Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory},
author = {Sweety Deswal and Rupali R. Malode and Ashok Kumar and Ajeet Kumar},
journal= {arXiv preprint arXiv:1903.10688},
year = {2019}
}