相关论文: Valley-engineering mobilities in two-dimensional m…
The existence of nontrivial Berry phases associated with two inequivalent valleys in graphene provides interesting opportunities for investigating the valley-projected topological states. Examples of such studies include observation of…
We analyze universal conductance fluctuations (UCF) in graphene in the framework of diagrammatic perturbation theory in the metallic regime. It is shown that strong inter-valley scattering lifts the valley degeneracy of electronic states,…
Under the application of a force, a material will deform and, hence, the crystal lattice will experience strain. This induced strain will alter the electronic properties of the material. In particular, strain in graphene generates an…
Two-dimensional electron systems (2DESs) confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid…
Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…
Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2…
Valley filtering processes have been explored in different graphene-based configurations and scenarios to control transport responses. Here we propose graphene multi-terminal set-ups properly designed to obtain valley filtered currents in a…
We show that the optical excitation of graphene with polarized light leads to the pure valley current where carriers in the valleys counterflow. The current in each valley originates from asymmetry of optical transitions and electron…
Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring…
The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic…
Interlayer rotation and stacking were recently demonstrated as effective strategies for tuning physical properties of various two-dimensional materials. The latter strategy was mostly realized in hetero-structures with continuously varied…
We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the…
Patterning and defect engineering are key methods to tune 2D materials' properties. However, generating 2D periodic patterns of point defects in 2D materials has been elusive until now, despite the well-established methods for creating…
We study the electron scattering produced by local out-of-plane strain deformations in the form of Gaussian bumps in graphene. Of special interest is to take into account the scalar field associated with the redistribution of charge due to…
Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…
The altermagnetism caused by alternating crystal environment provides a unique opportunity for designing new type of valley polarization. Here, we propose a way to realize valley polarization in two-dimensional (2D) tetragonal…
In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($\sigma^+$ or $\sigma^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations.…
Coherent optical dressing of quantum materials offers technological advantages to control their electronic properties, such as the electronic valley degree of freedom in monolayer transition metal dichalcogenides (TMDs). Here, we observe a…
We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS$_{2}$ and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant…
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…