相关论文: Strain-induced exciton decomposition and anisotrop…
The exciton spin dynamics are investigated both experimentally and theoretically in two-monolayer-thick GaAs/AlAs quantum wells with an indirect band gap and a type-II band alignment. The magnetic-field-induced circular polarization of…
We demonstrate anisotropic photostriction in two-dimensional orthorhombic semiconductors using time-dependent density functional theory. By tracing the dynamics of photoexcited carriers, we establish a quantitative link between carrier…
Controlling resonant Raman scattering in two-dimensional semiconductors typically requires tuning the excitation energy to match excitonic transitions. Here we show that mechanical deformation can achieve the same effect without changing…
Polarization-dependent two-dimensional Fourier-transform spectroscopy (2DFTS) is performed on excitons in strained bulk GaAs layers probing the coherent response for differing amounts of strain. Biaxial tensile strain lifts the degeneracy…
We study the transport of spin polarized electrons in n-GaAs using spatially resolved continuous wave Faraday rotation. From the measured steady state distribution, we determine spin relaxation times under drift conditions and, in the…
We study theoretically effects of an anisotropic elastic strain on the exciton energy spectrum fine structure and optical selection rules in atom-thin crystals based on transition-metal dichalcogenides. The presence of strain breaks the…
Optical resonators are a powerful platform to control the spontaneous emission dynamics of excitons in solid-state nanostructures. Here, we study a MoSe$_2$-WSe$_2$ van-der-Waals heterostructure that is integrated in a widely tunable open…
Monolayer germanium sulfide is gaining significant attention for its exceptional anisotropic electronic conductance, notable excitonic effects, and wide range of potential applications. In our study, we used density functional theory,…
We study the effects of the nonlinear piezoelectricity and the In distribution on the exciton energy, the electron-hole electric dipole moment, and the fine-structure splitting in stress-tunable InGaAs/GaAs quantum dots integrated onto a…
We show that anisotropic biaxial stress can be used to tune the built-in dipole moment of excitons confined in In(Ga)As quantum dots up to complete erasure of its magnitude and inversion of its sign. We demonstrate that this phenomenon is…
The exciton recombination and spin dynamics are investigated both experimentally and theoretically in an ensemble of indirect band gap (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment. The magnetic-field-induced circular…
Dynamics of nonradiative excitons with large in-plane wave vectors forming a so-called reservoir is experimentally studied in a high-quality semiconductor structure containing a 14-nm shallow GaAs/Al$_{0.03}$Ga$_{0.97}$As quantum well by…
The exciton states in strained (In,Ga)As nanorings embedded in a GaAs matrix are computed. The strain distribution is extracted from the continuum mechanical model, and the exact diagonalization approach is employed to compute the exciton…
We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain. Structural properties of the (Ga,Mn)As…
Exciton mobility in two-dimensional semiconductors is a key ingredient in materials-based design of optoelectronic functionalities. Monolayer transition metal dichalcogenides (TMDs) set a good test case, with tightly bound excitons and…
We investigate exciton spin memory in individual InAs/GaAs self-assembled quantum dots via optical alignment and conversion of exciton polarization in a magnetic field. Quasiresonant phonon-assisted excitation is successfully employed to…
Atomically thin semi-conductors are characterized by strongly bound excitons which govern the optical properties of the materials below and near the band edge. Efficient conversion of photons into electrical current requires, as a first…
The electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field is investigated. Two different sources of fluctuations are considered: (i) a symmetric dichotomous noise and (ii) a Gaussian correlated…
This paper investigates strain effects on the electronic and optical properties of monolayer GaSe using first-principles calculations. The deformation significantly alters energy dispersion, band gap, and the band edge states of GaSe. The…
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in…