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Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical…

The photon trapping nano-structures help to enhance quantum efficiency and reduce reflection for MSM photodetector that allows fast Si photodetectors at wavelength 800-950nm. The nanostructure consist of micro holes reduces reflection and…

The study proposes to use the photon trapping micro-structures to enhance quantum efficiency of the mid infrared photodetectors. The nanostructure that is consist of micro holes reduces reflection and bends the near normally incident light…

The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…

The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in…

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…

应用物理 · 物理学 2024-05-13 Ekaterina Ponizovskaya Devine , Toshishige Yamada , Shih-Yuan Wang , M Saif Islam

Super-oscillating beams can be used to create light spots whose size is below the diffraction limit with a side ring of high intensity adjacent to them. Optical traps made of the super-oscillating part of such beams exhibit superior…

光学 · 物理学 2019-05-22 Harel Nagar , Tamir Admon , Doron Goldman , Amir Eyal , Yael Roichman

Finite-difference time-domain method is employed to investigate the optical properties of semiconductor thin films patterned with circular holes. The presence of holes enhances the coupling of the incident plane wave with the thin film and…

介观与纳米尺度物理 · 物理学 2013-12-06 Minhan Lou , Hua Bao , Changying Zhao

Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths,…

The improvement of light absorption in Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures for solar cell applications is studied theoretically. First, using simple approaches we found that light absorption could be improved in a single…

介观与纳米尺度物理 · 物理学 2007-05-23 T. Sandu , W. P. Kirk

We present a novel approach based on machine learning for designing photonic structures. In particular, we focus on strong light confinement that allows the design of an efficient free-space-to-waveguide coupler which is made of Si- slab…

The absorption of thin hydrogenated amorphous silicon layers can be efficiently enhanced through a controlled periodic patterning. Light is trapped through coupling with photonic Bloch modes of the periodic structures, which act as an…

We demonstrate an efficient photon number detector for visible wavelengths using a silicon avalanche photodiode. Under subnanosecond gating, the device is able to resolve up to four photons in an incident optical pulse. The detection…

量子物理 · 物理学 2014-11-21 O. Thomas , Z. L. Yuan , J. F. Dynes , A. W. Sharpe , A. J. Shields

We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical…

We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic…

介观与纳米尺度物理 · 物理学 2012-12-17 Christos Trompoukis , Ounsi El Daif , Valérie Depauw , Ivan Gordon , Jef Poortmans

We investigate the specific optical regime occurring at short wavelengths, in the high absorption regime, in silicon thin-films patterned by periodically arranged nano-holes. Near-field scanning optical microscopy indicates that the…

Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…

光学 · 物理学 2009-11-13 T. Baehr-Jones , M. Hochberg , A. Scherer

Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum…

光学 · 物理学 2015-05-30 W. Pernice , C. Schuck , O. Minaeva , M. Li , G. N. Goltsman , A. V. Sergienko , H. X. Tang

Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this…

Light trapping in solar cells allows for increased current and voltage, as well as reduced materials cost. It is known that in geometrical optics, a maximum 4n^2 absorption enhancement factor can be achieved by randomly texturing the…

光学 · 物理学 2015-04-07 Vidya Ganapati , Owen D. Miller , Eli Yablonovitch
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