相关论文: Enabling III-V-based optoelectronics with low-cost…

Thin films of pure and self-deficient calcium titanites i.e., CaTiO$_3$, Ca$_{1-\alpha}$TiO$_3$, CaTi$_{1-\beta}$O$_3$ and CaTiO$_{3-\gamma}$ have been deposited on ITO substrate using dip coating method. X-ray diffraction and Scanning…

One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap…

While photonic integrated circuits (PICs) are being widely used in applications such as telecommunications and datacenter interconnects, PICs capable of replacing bulk optics and fibers in high-precision, highly-coherent applications will…

Thin-film photovoltaic (PV) technologies address crucial challenges in solar energy applications, including scalability, cost-effectiveness, and environmental sustainability. This paper reviews critically, thin-film technologies such as…

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and…

In this work, the thermo-optic coefficient (TOC) of the silicon-rich amorphous silicon carbide (a-SiC) thin film deposited by plasma-enhanced chemical vapor deposition is characterized. We found that the TOC of the film increases as its…

Reflective ptychography is a promising lensless imaging technique with a wide field of view, offering significant potential for applications in semiconductor manufacturing and detection. However, many semiconductor materials are coated with…

Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have emerged as a versatile platform for a wide range of applications, such as nonlinear optics, narrow-linewidth lasers, and quantum photonics. While thin-film Si$_3$N$_4$…

Monolithic 3D integration has become a promising solution for future computing needs. The metal inter-layer via (MIV) forms interconnects between substrate layers in Monolithic 3D integration. Despite small size of MIV, the area overhead…

Thin films of optimally-doped (001)-oriented YBa2Cu3O7-{\delta} are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on…

Sub-micrometer thin films are promising platforms for emerging flexible photovoltaic devices. Although the current market already produces efficient solar cells, the average wafer thickness of these devices remains far from the…

Recent years have witnessed significant developments in the study of nonlinear properties of various optical materials at the nanoscale. However, in most cases experimental results on harmonic generation from nanostructured materials are…

To continue scaling beyond 2-D CMOS with 3-D integration, any new 3-D IC technology has to be comparable or better than 2-D CMOS in terms of scalability, enhanced functionality, density, power, performance, cost, and reliability.…

Molecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains. However,…

Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states…

Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V…

Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy…

Metal hydrides have earlier been suggested for utilization in solar cells. With this as a motivation we have prepared thin films of yttrium hydride by reactive magnetron sputter deposition. The resulting films are metallic for low partial…

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of…

Modern opto-electronic devices are based on semiconductor heterostructures employing the process of electron-hole pair annihilation. In particular polar materials enable a variety of classic and even quantum light sources, whose on-going…