相关论文: Local excitons in silicon induced by SiGe quantum …

Spatially resolved EELS has been performed at diffuse interfaces between MoS$_2$ and MoSe$_2$ single layers. With a monochromated electron source (20 meV) we have successfully probed excitons near the interface by obtaining the low loss…

Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be…

We present an elegant and effective technology of extending the photoresponse of Si towards the IR range. Our approach is based on the use of Ag2S quantum dots planted on the surface of Si to create impurity states in Si band gap. Given the…

Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice…

We calculate the near-field optical spectra of excitons and biexcitons in semiconductor quantum dots naturally occurring at interface fluctuations in GaAs-based quantum wells, using a non-local description of the response function to a…

Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example,…

The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe as examples of typical III-V and II-VI…

Excitons -- two-particle correlated electron-hole pairs -- are the dominant low-energy optical excitation in the broad class of semiconductor materials, which range from classical silicon to perovskites, and from two-dimensional to organic…

Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We…

The ability to control excitons in semiconductors underlies numerous proposed applications, from excitonic circuits for computing and communications to polariton condensates to energy transport in photovoltaics. 2D semiconductors are…

We present time-resolved emission experiments of semiconductor quantum dots in silicon 3D inverse-woodpile photonic band gap crystals. A systematic study is made of crystals with a range of pore radii to tune the band gap relative to the…

Harnessing the optoelectronic response of organic semiconductors requires a thorough understanding of the fundamental light-matter interaction that is dominated by the excitation of correlated electron-hole pairs, i.e. excitons. The nature…

We propose a new scintillation-type detector in which high-energy radiation produces electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The…

Semiconductors in all dimensionalities ranging from 0D quantum dots and molecules to 3D bulk crystals support bound electron-hole pair quasiparticles termed as excitons. Over the past two decades, the emergence of a variety of…

Excitons - the particle-hole bound states - composed of localized electron-hole states in semiconducting systems are crucial to explaining the optical spectrum. Spectroscopic measurements can contain signatures of these two particle bound…

Excitons, quasiparticles of electrons and holes bound by Coulombic attraction, are created transiently by light and play an important role in optoelectronics, photovoltaics and photosynthesis. While they are also predicted to form…

Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors with strong excitonic response. Here, we demonstrate an…

We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD…

The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it…

Spatially structured light fields applied to semiconductor quantum dots yield fundamentally different absorption spectra than homogeneous beams. In this paper, we theoretically discuss the resulting spectra for different light beams using a…