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相关论文: A simple test for ideal memristors

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We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…

Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly…

Usually, resistive switching (RS) devices show digital RS memory (sharp SET and RESET process), which is most suitable for digital data storage applications. Some RS devices also manifest ideal memristive behavior or analog memory…

介观与纳米尺度物理 · 物理学 2023-01-03 Rajesh Deb , Saumya R. Mohapatra , Manjula G. Nair , Ujjal Das

It is generally impossible to separately measure the resistance of the functional component (i.e., the intrinsic device materials) and the parasitic component (i.e., terminals, interfaces and serial loads) in a two-terminal device. Yet such…

介观与纳米尺度物理 · 物理学 2017-09-13 Yang Lu , I-Wei Chen

A memristor is a nonlinear two-terminal electrical element that incorporates memory features and nanoscale properties, enabling us to design very high-density artificial neural networks. To enhance the memory property, we should use…

动力系统 · 数学 2022-07-07 Leila Eftekhari , Mohammad M. Amirian

Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…

介观与纳米尺度物理 · 物理学 2012-09-24 Carsten Timm , Massimiliano Di Ventra

Under certain conditions, applying a sequence of voltage pulses of alternating polarities across a resistive switching memory device induces a finite number of fixed-point attractors in its time-averaged dynamics, known as dynamical…

介观与纳米尺度物理 · 物理学 2026-01-14 Valeriy A. Slipko , Alon Ascoli , Fernando Corinto , Yuriy V. Pershin

Recent breakthroughs in associative memories suggest that silicon memories are coming closer to human memories, especially for memristive Content Addressable Memories (CAMs) which are capable to read and write in analog values. However, the…

新兴技术 · 计算机科学 2023-04-24 Jiaao Yu , Paul-Philipp Manea , Sara Ameli , Mohammad Hizzani , Amro Eldebiky , John Paul Strachan

The class of memory circuit elements which comprises memristive, memcapacitive, and meminductive systems, is gaining considerable attention in a broad range of disciplines. This is due to the enormous flexibility these elements provide in…

仪器与探测器 · 物理学 2012-07-04 Y. V. Pershin , M. Di Ventra

An analog computer makes use of continuously changeable quantities of a system, such as its electrical, mechanical, or hydraulic properties, to solve a given problem. While these devices are usually computationally more powerful than their…

新兴技术 · 计算机科学 2019-10-09 G. Alvarado Barrios , J. C. Retamal , E. Solano , M. Sanz

The review of studies on memristive properties or effect of resistive switchings in four classes of high temperature superconductors is presented in order to reveal functional properties of HTSCs which become apparent in the effects under…

材料科学 · 物理学 2018-01-30 N. A. Tulina

In-memory computing is a promising alternative to traditional computer designs, as it helps overcome performance limits caused by the separation of memory and processing units. However, many current approaches struggle with unreliable…

When someone mentions the name of a known person we immediately recall her face and possibly many other traits. This is because we possess the so-called associative memory, that is the ability to correlate different memories to the same…

神经元与认知 · 定量生物学 2010-08-26 Yuriy V. Pershin , Massimiliano Di Ventra

The memristor can be used as non volatile memory (NVM) and for emulating neuron behavior. It has the ability to switch between low resistance $R_{on}$ and high resistance values $R_{off}$, and exhibit the synaptic dynamic behaviour such as…

新兴技术 · 计算机科学 2018-09-28 Aidana Irmanova , Grant A. Ellis , Alex Pappachen James

Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…

应用物理 · 物理学 2024-11-08 Shengbo Wang , Jingfang Pei , Cong Li , Xuemeng Li , Li Tao , Arokia Nathan , Guohua Hu , Shuo Gao

This paper gives an overview of a new technique, named pseudo-ring testing (PRT). PRT can be applied for testing wide type of random access memories (RAM): bit- or word-oriented and single- or dual-port RAM's. An essential particularity of…

硬件体系结构 · 计算机科学 2011-11-09 Gh. Bodean , D. Bodean , A. Labunetz

Research has shown that both high school and university students' reasoning patterns regarding direct current resistive electric circuits often differ from the currently accepted explanations. At present, there are no standard diagnostic…

物理教育 · 物理学 2009-11-10 Paula V. Engelhardt , Robert J. Beichner

Since its inception the memristive fuse has been a good example of how small numbers of memristors can be combined to obtain useful behaviours unachievable by individual devices. In this work, we link the memristive fuse concept with that…

新兴技术 · 计算机科学 2016-09-09 Alexander Serb , Ali Khiat , Themistoklis Prodromakis

A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable…

There have been a plethora of research on multi-level memory devices, where the resistive random-access memory (RRAM) is a prominent example. Although it is easy to write an RRAM device into multiple (even quasi-continuous) states, it…

新兴技术 · 计算机科学 2024-10-29 Yongxiang Li , Shiqing Wang , Zhong Sun