相关论文: Structural properties of Silicon-Germanium and Ger…
We investigated the electronic properties of strained Si/Ge core-shell nanowires along the [110] direction using first principles calculations based on density-functional theory. The diameter of the studied core-shell wire is up to 5 nm. We…
Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain…
The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and…
Core-shell Ge-SixGe1-x nanowires (NWs) are expected to contain large strain fields due to the lattice-mismatch at the core/shell interface. Here we report the measurement of core strain in a NW heterostructure using Raman spectroscopy. We…
Strain modulated electronic properties of Si/Ge core-shell nanowires along [110] direction were reported based on first principles density-functional theory calculations. Particularly, the energy dispersion relationship of the…
The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell…
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell…
Freestanding semiconductor nanowires have opened up new possibilities for semiconductor devices, enabling geometries, material combinations and strain states which were not previously possible. Along these lines, spontaneous bending in…
Strained nanowires with varying InAs/InP core-shell thicknesses were grown using Chemical Beam Epitaxy. Microphotoluminescence spectroscopy, performed at low temperature, was then used to study the optical properties of single wires.…
We used density-functional theory based first principles simulations to study the effects of uniaxial strain and quantum confinement on the electronic properties of germanium nanowires along the [110] direction, such as the energy gap and…
Using the extended discrete interaction model we investigate the tuneabilty of surface plasmon resonance in alloys and core-shell nanoparticles made from silver and gold. We show that the surface plasmon resonance of these alloys and…
We have applied density-functional theory (DFT) based calculations to investigate the size and strain effects on the electronic properties, such as band structures, energy gaps, and effective masses of the electron and the hole, in Si…
We analyze the morphological stability against azimuthal, axial, and general helical perturbations for epitaxial core-shell nanowires in the growth regimes limited by either surface diffusion or evaporation-condensation surface kinetics.…
The strain configuration induced by the lattice mismatch in a core-shell nanowire is calculated analytically, taking into account the crystal anisotropy and the difference in stiffness constants of the two materials. The method is applied…
GaAs/Fe$_{3}$Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe$_3$Si shells exhibit nanofacets. These facets…
We present results on the growth of CdTe-HgTe core-shell nanowires, a realization of a quasi one-dimensional heterostructure of the topological insulator HgTe. The growth is a two step process consisting of the growth of single crystalline…
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…
Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition…
The spontaneous bending of core-shell nanowires through asymmetric shell deposition has implications for sensors, enabling both parallel fabrication and creating advantageous out-of-plane nanowire sensor geometries. This study investigates…
We compute strain distributions in core-shell nanowires of zinc blende structure. We use both continuum elasticity theory and an atomistic model, and consider both finite and infinite wires. The atomistic valence force-field (VFF) model has…