相关论文: Experimental Characterization, Optimization, and R…

This paper summarizes our work on characterizing application memory error vulnerability to optimize datacenter cost via Heterogeneous-Reliability Memory (HRM), which was published in DSN 2014, and examines the work's significance and future…

In this work, we study a recently proposed direct shaping code for flash memory. This rate-1 code is designed to reduce the wear for SLC (one bit per cell) flash by minimizing the average fraction of programmed cells when storing structured…

Improvements in main memory storage density are primarily driven by process technology scaling, which negatively impacts reliability by exacerbating various circuit-level error mechanisms. To compensate for growing error rates, both memory…

Flash memories intended for SSD and mobile applications need to provide high random I/O performance. This requires using efficient schemes for reading small chunks of data (e.g. 0.5KB - 4KB) from random addresses. Furthermore, in order to…

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…

Although NAND flash memory has achieved continuous capacity improvements via advanced 3D stacking and multi-level cell technologies, these innovations introduce new reliability challenges, particularly lateral charge spreading (LCS), absent…

The NAND flash memory channel is corrupted by different types of noises, such as the data retention noise and the wear-out noise, which lead to unknown channel offset and make the flash memory channel non-stationary. In the literature,…

Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes…

As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

Semiconductor NAND Flash based memory technology dominates the electronic Non-Volatile storage media market. Though NAND Flash offers superior performance and reliability over conventional magnetic HDDs, yet it suffers from certain…

Machine Learning (ML) is making a strong resurgence in tune with the massive generation of unstructured data which in turn requires massive computational resources. Due to the inherently compute- and power-intensive structure of Neural…

Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…

This paper summarizes our work on experimental characterization and analysis of reduced-voltage operation in modern DRAM chips, which was published in SIGMETRICS 2017, and examines the work's significance and future potential. We take a…

Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

The size reduction of transistors in the latest flash memory generation has resulted in programming and data erasure issues within these designs. Consequently, ensuring reliable data storage has become a significant challenge for these…

Due to the small size of nanoscale devices, they are highly prone to process disturbances which results in manufacturing defects. Some of the defects are randomly distributed throughout the nanodevice layer. Other disturbances tend to be…

Recommendation system has gained a large popularity for a variety of personalized suggestion tasks, but the ever-increasing number of user data makes real-time processing of recommendation systems difficult. NAND flash memory-based…

Voltage controlled magnetoresistive random access memory (VC MRAM) is a promising candidate for a future low-power high-density memory. The main causes of bit errors in VC MRAM are write error and retention error. As the size of the memory…