相关论文: Experimental Characterization, Optimization, and R…

This work investigates a new erase scheme in NAND flash memory to improve the lifetime and performance of modern solid-state drives (SSDs). In NAND flash memory, an erase operation applies a high voltage (e.g., > 20 V) to flash cells for a…

Flash-based disk caches, for example Bcache and Flashcache, has gained tremendous popularity in industry in the last decade because of its low energy consumption, non-volatile nature and high I/O speed. But these cache systems have a worse…

We propose a novel solid-state disk (SSD) architecture that utilizes a double-data-rate synchronous NAND flash interface for improving read and write performance. Unlike the conventional design, the data transfer rate in the proposed design…

The read channel in Flash memory systems degrades over time because the Fowler-Nordheim tunneling used to apply charge to the floating gate eventually compromises the integrity of the cell because of tunnel oxide degradation. While…

In this paper, we consider modulation codes for practical multilevel flash memory storage systems with cell levels. Instead of maximizing the lifetime of the device [Ajiang-isit07-01, Ajiang-isit07-02, Yaakobi_verdy_siegel_wolf_allerton08,…

Erasure codes play an important role in storage systems to prevent data loss. In this work, we study a class of erasure codes called Multi-Erasure Locally Recoverable Codes (ME-LRCs) for flash memory array. Compared to previous related…

IR-based fault localization approaches achieves promising results when locating faulty files by comparing a bug report with source code. Unfortunately, they become less effective to locate faulty methods. We conduct a preliminary study to…

State-of-the-art DRAM read disturbance mitigations rely on the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first read disturbance bitflip) to securely and performance- and…

Although read disturbance has emerged as a major reliability concern, managing read disturbance in modern NAND flash memory has not been thoroughly investigated yet. From a device characterization study using real modern NAND flash memory,…

Recently, flash memories have become a competitive solution for mass storage. The flash memories have rather different properties compared with the rotary hard drives. That is, the writing of flash memories is constrained, and flash…

The in-memory computing paradigm with emerging memory devices has been recently shown to be a promising way to accelerate deep learning. Resistive processing unit (RPU) has been proposed to enable the vector-vector outer product in a…

Voltage underscaling below the nominal level is an effective solution for improving energy efficiency in digital circuits, e.g., Field Programmable Gate Arrays (FPGAs). However, further undervolting below a safe voltage level and without…

In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write…

Non-volatile memory (NVM) is a class of promising scalable memory technologies that can potentially offer higher capacity than DRAM at the same cost point. Unfortunately, the access latency and energy of NVM is often higher than those of…

The last decade has witnessed the breakthrough of deep neural networks (DNNs) in many fields. With the increasing depth of DNNs, hundreds of millions of multiply-and-accumulate (MAC) operations need to be executed. To accelerate such…

As memory technologies continue to shrink and memory error rates increase, the demand for stronger reliability becomes increasingly critical. Fine-grain memory replication has emerged as an appealing approach to improving memory fault…

State-of-the-art techniques for addressing scaling-related main memory errors identify and repair bits that are at risk of error from within the memory controller. Unfortunately, modern main memory chips internally use on-die error…

Our ISCA 2013 paper provides a fundamental empirical understanding of two major factors that make it very difficult to determine the minimum data retention time of a DRAM cell, based on the first comprehensive experimental characterization…

Resistive random access memories (RRAM) are novel nonvolatile memory technologies, which can be embedded at the core of CMOS, and which could be ideal for the in-memory implementation of deep neural networks. A particularly exciting vision…

This article summarizes key results of our work on experimental characterization and analysis of latency variation and latency-reliability trade-offs in modern DRAM chips, which was published in SIGMETRICS 2016, and examines the work's…