相关论文: Anomalous Scaling Exponents of Capacitance-Voltage…
We observed mode-locking (ML) of rf-dc driven vortex arrays in a superconducting weak pinning a-NbGe film. The ML voltage shows the expected scaling $V\propto f\sqrt{B}$ with $f$ the rf-frequency and $B$ the magnetic field. For large…
The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are…
We study the critical behavior of magnetic thin films as a function of the film thickness. We use the ferromagnetic Ising model with the high-resolution multiple histogram Monte Carlo (MC) simulation. We show that though the 2D behavior…
Temperature drift, stress birefringence and low frequency vibration lead to the randomness and fluctuation of the output of optical voltage sensor(OVS). In order to solve the problem, this study adopts the lock-in amplifier technology with…
CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…
In order to determine the spatial distribution, Galactic model parameters and luminosity function of cataclysmic variables (CVs), a $J$-band magnitude limited sample of 263 CVs has been established using a newly constructed…
We propose a model-independent scaling method to study the physical properties of high-temperature superconductors in the normal state. We have analyze the experimental data of the c-axis resistivity, the in-plane resistivity, the Hall…
Experimental results from a 65 nm CMOS commercial technology SRAM test chip reveal a linear correlation between a new electrical parameter -- the word-line voltage margin (VWLVM) -- and the measured circuit alpha-SER. Additional experiments…
We use frequency-dependent capacitance-voltage spectroscopy to measure the tunneling probability into self-assembled InAs quantum dots. Using an in-plane magnetic field of variable strength and orientation, we are able to obtain information…
Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge of the exact values for the ITCs is required in order to perform accurate and predictive compact model simulations of their…
Numerical Simulations are employed to create amorphous nano-films of a chosen thickness on a crystalline substrate which induces strain on the film. The films are grown by a vapor deposition technique which was recently developed to create…
In order to develop a method to extract the parameters of the two inherent Schottky contacts from a single current-voltage (I-V) characteristic curve, the I-V characteristics of metal-semiconductor-metal (MSM) diodes with asymmetric…
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic…
Thickness uniformity is regarded as an important parameter in designing thin film devices. However, some applications based on films with non-uniform thickness have recently emerged, such as gas sensors and optimized materials based on the…
In this work, methods to determine more accurate doping profiles in semiconductors is explored where trap-induced artifacts such as hysteresis and doping artifacts are observed. Specifically in CIGS, it is shown that this fast…
This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded…
Quantitative magneto-optical imaging of a type-II superconductor thin film cooled under zero, homogeneous, and inhomogeneous applied magnetic fields, indicates that the latter procedure leads to an enhancement of the screening capacity.…
This paper is the second part of a series of papers about empirical approaches to open circuit voltage (OCV) modeling and its performance comparison in lithium-ion batteries. The first part of the series introduced various sources of…
We present field effect measurements on discontinuous 2D thin films which are composed of a sub monolayer of nano-grains of Au, Ni, Ag or Al. Like other electron glasses these systems exhibit slow conductance relaxation and memory effects.…
A simple electronic experiment with a field effect transistor type microstructure is suggested. The thin superconductor layer is the source-drain channel of the layered structure where an AC current is applied. It is necessary to measure…