相关论文: Effective Dresselhaus and Rashba spin-orbit intera…
One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/Al$_x$Ga$_{1-x}$As quantum well have been studied theoretically and experimentally. The interfacial spin splitting has been shown to…
The interplay between Rashba, Dresselhaus and Zeeman interactions in a quantum well submitted to an external magnetic field is studied by means of an accurate analytical solution of the Hamiltonian, including electron-electron interactions…
The spin-orbit interaction of 2D electrons in the quantum wells grown from the III-V semiconductors consists of the two parts with different symmetry: the Bychkov-Rashba and the Dresselhaus terms. The last term is usually attributed to the…
The effect of spin-orbit interaction was studied in a high-quality $p$-AlGaAs/GaAs/AlGaAs structure with a square quantum well using acoustic methods. The structure grown on a GaAs (100) substrate was symmetrically doped with carbon on both…
The spin splitting of conduction band electrons in inversion-asymmetric InGaAs/InP quantum wells is studied by Shubnikov-de Haas measurements combining the analysis of beating patterns and coincidence measurements in doubly tilted magnetic…
We investigate the Rashba and Dresselhaus spin-orbit (SO) couplings in GaAs quantum wells in the range of well widths $w$ allowing for a transition of the electron occupancy from one to two subbands. By performing a detailed…
The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron…
The spin-orbit interaction of two-dimensional (2D) electrons in semiconductor quantum wells is usually considered to be determined by the band profile of a heterostructure. In the GaAs/AlGaAs type heterosystems, this interaction consists of…
We demonstrate that the size of the electric-field-induced Rashba spin splitting in an 80 nm wide modulation-doped InGaSb quantum well can depend strongly on the spatial variation of the electric field. In a slightly asymmetric quantum well…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
In semiconductors with inversion asymmetry, spin-orbit coupling gives rise to the well-known Dresselhaus and Rashba effects. If one considers quantum wells with two or more conduction subbands, an additional, intersubband-induced spin-orbit…
In this work, we present the analytical solution of the effective mass Pauli equation, with Rashba and linear Dresselhaus interactions, for an electron gas moving through a semiconductor quantum dot under a longitudinal electric field,…
Spin-orbit interaction in semiconductor structures with broken space inversion symmetry leads to spin splitting of electron and hole states even in the absence of magnetic field. We discover that, beyond the Rashba and Dresselhaus…
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional…
We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities…
The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the…
We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba…
Aiming at the optimization of the spin diffusion length in (001) GaAs quantum wells, we explore the effect of the anisotropy of the spin-orbit coupling on the competition between the Rashba and the Dresselhaus spin-orbit couplings by…
We propose a simple method to detect the relative strength of Rashba and Dresselhaus spin-obit interactions in quantum wells (QWs) without relying on the directional-dependent physical quantities. This method utilize the asymmetry of…
We consider stationary spin current in a (110)-oriented GaAs-based symmetric quantum well due to a nonlinear response to an external periodic electric field. The model assumed includes the Dresselhaus spin-orbit interaction and the random…