Efficient switching of Rashba spin splitting in wide modulation-doped quantum wells
其他凝聚态物理
2009-11-11 v1 材料科学
摘要
We demonstrate that the size of the electric-field-induced Rashba spin splitting in an 80 nm wide modulation-doped InGaSb quantum well can depend strongly on the spatial variation of the electric field. In a slightly asymmetric quantum well it can be an order of magnitude stronger than for the average uniform electric field. For even smaller asymmetry spin subbands can have wave functions and/or expectation values of the spin direction that are completely changed as the in-plane wave vector varies. The Dresselhaus effect can give an anticrossing at which the spin rapidly flips.
引用
@article{arxiv.cond-mat/0610371,
title = {Efficient switching of Rashba spin splitting in wide modulation-doped quantum wells},
author = {D. M. Gvozdic and U. Ekenberg},
journal= {arXiv preprint arXiv:cond-mat/0610371},
year = {2009}
}
备注
4 pages, 3 figures