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The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected charge carriers. We propose a correction method for the…

材料科学 · 物理学 2015-05-13 S. Modesti , H. Gutzmann , J. Wiebe , R. Wiesendanger

The topological behavior of heavy metal alloys opens a vast area for incredible research and future technology. Here, we extend our previous report about the superconducting properties of Sn0.4Sb0.6 along with the compositional variation of…

材料科学 · 物理学 2020-10-09 Prince Sharma , M. M. Sharma , Kapil Kumar , Mahesh Kumar , V. P. S. Awana

First principles calculations of rare earth (RE)-doped LaSi3N5 host lattice are performed to obtain the electronic structure, the band gap (BG), and the character of electronic transitions. Doping with both trivalent and bivalent RE cations…

材料科学 · 物理学 2015-06-23 Ismail A. M. Ibrahim , Zoltan Lences , Pavol Sajgalik , Lubomir Benco , Martijn Marsman

Density functional calculations of the electronic structure are used to elucidate the bonding of Li$_3$AlH$_6$. It is found that this material is best described as ionic, and in particular that the [AlH$_6$]$^{3-}$ units are not reasonably…

材料科学 · 物理学 2009-11-10 D. J. Singh

We present results of extensive theoretical studies of Co$_2$FeAl$_{1-x}$Si$_x$ Heusler alloys, which have been performed in the framework of density functional theory employing the all-electron full-potential linearized augmented…

材料科学 · 物理学 2021-09-21 N. Gonzalez Szwacki , Jacek A. Majewski

The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has…

Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $\alpha$ and $\beta$' phases, respectively. In this work, we utilise angle-resolved photoelectron…

We investigate the possible magnetism on the Si(111)-$\sqrt 3 \times \sqrt 3$ surface, which is stabilized for highly boron-doped samples, by using first-principles calculations. When the silicon adatom on top of a boron atom is removed to…

材料科学 · 物理学 2018-04-04 Chang-Youn Moon , Daejin Eom , Ja-Yong Koo

In this paper, we provide a comprehensive theoretical analysis of the electronic structure of InAs(111) surfaces with a special attention paid to the energy region close to the fundamental bandgap. Starting from the bulk electronic…

材料科学 · 物理学 2021-03-05 Ivan Vrubel , Dmitry Yudin , Anastasiia Pervishko

The alkali halides, known as ionic crystals, have the NaCl-type or CsCl-type structure as the ground state. We study the structural, vibrational, and electronic properties of two-dimensional (2D) ionic crystals from first-principles. Two…

材料科学 · 物理学 2022-09-14 Shota Ono

We have carried out detailed high resolution ARPES measurements and band structure calculations to study the electronic structure of CaMnSb$_{2}$. The observed Fermi surface mainly consists of one hole pocket around ${\Gamma}$ point and one…

We studied the electronic band structure of the low-index fcc Ag surfaces (001), (110) and (111), by using the empirical tight-binding method in addition with the surface Green function matching method. We report the energy values for…

材料科学 · 物理学 2013-11-26 H. J. Herrera-Suarez , A. Rubio-Ponce , D. Olguin

Single layer Pb on top of (111) surfaces of group IV semiconductors hosts charge density wave and superconductivity depending on the coverage and on the substrate. These systems are normally considered to be experimental realizations of…

强关联电子 · 物理学 2021-07-16 Cesare Tresca , Matteo Calandra

In this article, the electronic band structure $\beta-(Al_xGa_{1-x})_2O_3$ alloy system is calculated with $\beta-Ga_2O_3$ as the bulk crystal. The technique of band unfolding is implemented to obtain the effective bandstructure…

材料科学 · 物理学 2022-07-18 Ankit Sharma , Uttam Singisetti

The metal-insulator transition observed in the In/Si(111)-4x1 reconstruction is studied by means of ab initio calculations of a simplified model of the surface. Different surface bands are identified and classified according to their origin…

材料科学 · 物理学 2009-11-11 Sampsa Riikonen , Andres Ayuela , Daniel Sanchez-Portal

The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of the interband transitions in these materials, with several close-lying band gaps. Three-dimensional plots of…

介观与纳米尺度物理 · 物理学 2018-09-18 Surani M. Gunasekera , Daniel Wolverson , Lewis S. Hart , Marcin Mucha-Kruczynski

The substitutional dependence of valence and spin-state configurations of Sr(Fe$_{1-x}$Co$_x$)$_2$As$_2$ ($x =$ 0, 0.05, 0.11, 0.17, and 0.38) is investigated with near-edge x-ray absorption fine structure at the $L_{2,3}$ edges of Fe, Co,…

超导电性 · 物理学 2012-09-06 M. Merz , F. Eilers , Th. Wolf , P. Nagel , H. v. Löhneysen , S. Schuppler

Hydrogenated silicenes possess peculiar properties owing to the strong H-Si bonds, as revealed by an investigation using first principles calculations. The various charge distributions, bond lengths, energy bands, and densities of states…

材料科学 · 物理学 2015-10-28 Shih-Yang Lin , Shen-Lin Chang , Ngoc Thanh Thuy Tran , Po-Hua Yang , Ming-Fa Lin

The stability and electronic structure of a single monatomic Al wire has been studied using the ab initio pseudopotential method. The Al wire undergoes two structural rearrangements under compression, i.e., zigzag configurations at angles…

材料科学 · 物理学 2015-06-24 Jin-Cheng Zheng , Hui-Qiong Wang , A. T. S. Wee , C. H. A. Huan

We investigated the nonequilibrium electronic structure of 2H-NbSe$_2$ by time- and angle-resolved photoemission spectroscopy. We find that the band structure is distinctively modulated by strong photo-excitation, as indicated by the…