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Quantum wells formed by layers of HgTe between Hg$_{1-x}$Cd$_x$Te barriers lead to two-dimensional (2D) topological insulators, as predicted by the BHZ model. Here, we theoretically and experimentally investigate the characteristics of…

介观与纳米尺度物理 · 物理学 2024-05-24 G. J. Ferreira , D. R. Candido , F. G. G. Hernandez , G. M. Gusev , E. B. Olshanetsky , N. N. Mikhailov , S. A. Dvoretsky

We show that electrons in ordinary III-V semiconductor double wells with an in-plane modulating periodic potential and inter well spin-orbit interaction are tunable Topological Insulators (TIs). Here the essential TI ingredients, namely,…

介观与纳米尺度物理 · 物理学 2015-02-10 Sigurdur I. Erlingsson , J. Carlos Egues

Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels,…

介观与纳米尺度物理 · 物理学 2019-10-11 G. M. Gusev , Z. D Kvon , E. B. Olshanetsky , N. N. Mikhailov

Inverted HgTe/CdTe quantum wells have been used as a platform for the realization of 2D topological insulators, bulk insulator materials with spin-helical metallic edges states protected by time-reversal symmetry. This work investigates the…

介观与纳米尺度物理 · 物理学 2017-10-11 Dimy Nanclares , Leandro R. F. Lima , Caio H. Lewenkopf , Luis G. G. V. Dias da Silva

We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insulator. Hall bars of $50\,\mu$m in length down to a few $\mu$m…

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing…

We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements…

介观与纳米尺度物理 · 物理学 2015-05-28 G. M. Gusev , Z. D. Kvon , O. A. Shegai , N. N. Mikhailov , S. A. Dvoretsky , J. C. Portal

The discovery of quantum spin Hall materials with huge bulk gaps in experiment, such as bismuthene, provides a versatile platform for topological devices. We propose a topological quantum dot (QD) device in bismuthene ribbon in which two…

介观与纳米尺度物理 · 物理学 2019-05-22 Jiaojiao Zhou , Tong Zhou , Shu-guang Cheng , Hua Jiang , Zhongqin Yang

Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…

介观与纳米尺度物理 · 物理学 2013-05-30 Carsten Timm

The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in…

介观与纳米尺度物理 · 物理学 2009-11-13 Markus Koenig , Hartmut Buhmann , Laurens W. Molenkamp , Taylor L. Hughes , Chao-Xing Liu , Xiao-Liang Qi , Shou-Cheng Zhang

We calculate bulk transport properties of two-dimensional topological insulators based on HgTe quantum wells in the ballistic regime. Interestingly, we find that the conductance and the shot noise are distinctively different for the…

介观与纳米尺度物理 · 物理学 2015-05-14 E. G. Novik , P. Recher , E. M. Hankiewicz , B. Trauzettel

We investigate a system consisting of one or two topological-insulator leads which are tunnel coupled to a single dot level. The leads are described by the one-dimensional Su-Schrieffer-Heeger model. We show that (topological) edge states…

介观与纳米尺度物理 · 物理学 2022-03-18 Martin T. Maurer , Yen-Ting Lin , Dante M. Kennes , Mikhail Pletyukhov , Herbert Schoeller , Volker Meden

Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width…

介观与纳米尺度物理 · 物理学 2021-12-01 G. M. Gusev , Z. D. Kvon , D. A. Kozlov , E. B. Olshanetsky , M. V. Entin , N. N. Mikhailov

We study electron transport at the edge of a generic disordered two-dimensional topological insulator, where some channels are topologically protected from backscattering. Assuming the total number of channels is large, we consider the edge…

介观与纳米尺度物理 · 物理学 2016-03-08 E. Khalaf , M. A. Skvortsov , P. M. Ostrovsky

We study quantum point contacts in two-dimensional topological insulators by means of quantum transport simulations for InAs/GaSb heterostructures and HgTe/(Hg,Cd)Te quantum wells. In InAs/GaSb, the density of edge states shows an…

介观与纳米尺度物理 · 物理学 2016-05-17 Michał Papaj , Łukasz Cywiński , Jerzy Wróbel , Tomasz Dietl

The two-dimensional topological insulating phase has been experimentally discovered in HgTe quantum wells (QWs). The low-energy physics of two-dimensional topological insulators (TIs) is described by the Bernevig-Hughes-Zhang (BHZ) model,…

介观与纳米尺度物理 · 物理学 2012-11-26 P. Michetti , P. H. Penteado , J. C. Egues , P. Recher

Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states…

介观与纳米尺度物理 · 物理学 2019-09-11 T. Campos , M. A. T. Sandoval , L. Diago-Cisneros , G. M. Sipahi

The outstanding transport properties expected at the edge of two-dimensional time-reversal invariant topological insulators have proven to be challenging to realize experimentally, and have so far only been demonstrated in very short…

介观与纳米尺度物理 · 物理学 2020-04-06 Luca Vannucci , Thomas Olsen , Kristian S. Thygesen

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a…

介观与纳米尺度物理 · 物理学 2015-03-13 M. Z. Hasan , C. L. Kane

Gapless topological boundary states characterize nontrivial topological phases arising from the bulk-boundary correspondence in symmetry-protected topological materials, such as the emergence of helical edge states in a two-dimensional…

材料科学 · 物理学 2024-04-19 Yueh-Ting Yao , Xiaoting Zhou , Yi-Chun Hung , Hsin Lin , Arun Bansil , Tay-Rong Chang
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