相关论文: Highly thermally stable sub-20nm magnetic random-a…
Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the…
Antiferromagnets have been generating intense interest in the spintronics community, owing to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While the control of antiferromagnetic (AFM) orders has…
Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For…
It is of considerable technological importance to achieve an electrical control of magnetism of sufficient magnitude. To overcome the in-plane shape anisotropy, needed is the electrical control of a perpendicular magnetic anisotropy (PMA).…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Magnetic anisotropy, spin wave (SW) excitation and exchange stiffness constant of amorphous FeTaC ($d$ = 20-200 nm) films were studied as a function of thickness using micro-strip ferromagnetic resonance (MS-FMR) technique. The MS-FMR…
We report perpendicular magnetic anisotropy (PMA) in the half-metallic ferromagnetic Heusler alloy Co$_2$Fe$_{0.4}$Mn$_{0.6}$Si (CFMS) in a MgO/CFMS/Pd trilayer stack. PMA is found for CFMS thicknesses between 1 and 2 nm, with a magnetic…
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…
We propose that Cu-substituted Fe$_2$P, (Fe$_{1-x}$Cu$_x$)$_2$P ($x\sim 0.16$), to be an outstanding contender for the STT-MRAM application. Using first principles based calculations in the framework of density functional theory and through…
In this work, we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of the proposed memories are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) via VSH effect and…
Energy-efficient methods are addressed for leveraging low energy barrier nanomagnetic devices within neuromorphic architectures. Using a Magnetoresistive Random Access Memory (MRAM) probabilistic device (p-bit) as the basis of neuronal…
Understanding the magnetic anisotropy at ferromagnetic metal/oxide interface is a fundamental and intriguing subject. Here we propose an approach to manipulate the strength of perpendicular magnetic anisotropy (PMA) by varying MgO thickness…
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and…
We investigate magnetoresistance phenomena associated with the magnetization hard-axis collapse in polycrystalline Co thin films. Transport measurements reveal that, for specific orientations of the applied magnetic field, the system…
Permalloy (Py:Ni81Fe19) exhibits an anisotropic magnetoresistance (AMR) which is very often used to read magnetic signals from storage devices. Py-films of thickness 20nm were prepared by dc-magnetron sputtering in a magnetic field onto…
Exploring novel systems with perpendicular magnetic anisotropy (PMA) is vital for advancing memory devices. In this study, we report an intriguing PMA system involving an ultrathin Fe layer on an antiferromagnetic (AFM) CoO(001) surface.…
Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO (Physical Review Applied 5, 044006 (2016)). In this study, we shed a light on the origin of large voltage-induced anisotropy…
It is found in the Pt/Co/Pt(111) sandwiches that perpendicular magnetic anisotropy weakens associated with the dramatic magnetization enhancement as the temperature decreases below a critical temperature, T_cri, which increases with the Pt…
Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting the paramagnetic molecules across two ferromagnets (FM) electrodes of a magnetic tunnel junction (MTJ). MTJMSD provides…
Hardware neural networks that implement synaptic weights with embedded non-volatile memory, such as spin torque memory (ST-MRAM), are a major lead for low energy artificial intelligence. In this work, we propose an approximate storage…