相关论文: Universal voltage scaling due to self-averaging of…

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…

We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier…

The chapter generalizes results on influence of uniaxial strain and adsorption on the electron states and charge transport or localization in graphene with different configurations of imperfections (point defects): resonant (neutral)…

Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…

We have studied quantum wires using the Green's function technique and the density-functional theory, calculating the electronic structure and the conductance. All the numerics are implemented using the finite-element method with a…

One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended…

We describe electrical transport in ideal single-layer graphene at zero applied bias. There is a crossover from collisionless transport at frequencies larger than k_B T/hbar (T is the temperature) to collision-dominated transport at lower…

Low-field magnetoresistance is ubiquitous in low-dimensional metallic systems with high resistivity and well understood as arising due to quantum interference on self-intersecting diffusive trajectories. We have found that in graphene this…

We report room temperature scanning tunneling microscopy and spectroscopy study of bilayer graphene prepared by mechanical exfoliation on SiO$_2$/Si surface and electrically contacted with gold pads using a mechanical mask. The bulk…

We report an anomalous temperature-induced transition in thermal conductivity in germanene monolayer around a critical temperature $T_c = 350 \, \text{K}$. Equilibrium molecular dynamics simulations reveal a transition from $\kappa \sim…

Hot electron effects in graphene are significant because of graphene's small electronic heat capacity and weak electron-phonon coupling, yet the dynamics and cooling mechanisms of hot electrons in graphene are not completely understood. We…

Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Here, we reveal a universal connection between graphene's…

We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been…

We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of…

We investigate the contribution of charge puddles to the non-vanishing conductivity minimum in disordered graphene flakes at the charge neutrality point. For that purpose, we study systems with a geometry that suppresses the transmission…

In the recent paper [arXiv:0802.2216, 15 Feb 2008], Kashuba argued that the intrinsic conductivity of graphene independent of temperature originated in strong electron-hole scattering. We propose a much more explicit derivation based on a…

Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene FETs in the bias region of negative output differential resistance. We show that, compared to the region of quasi-saturation, a…

We argue that the unscreened Coulomb interaction in graphene provides a positive, universal, and logarithmic correction to scaling of zero-temperature conductivity with frequency. The combined effect of the disorder due to wrinkling of the…

The relationship between the universal conductance fluctuation and the weak localization effect in monolayer graphene is investigated. By comparing experimental results with the predictions of the weak localization theory for graphene, we…

Two-dimensional carbon, or graphene, is a semi-metal that presents unusual low-energy electronic excitations described in terms of Dirac fermions. We analyze in a self-consistent way the effects of localized (impurities or vacancies) and…