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Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics…

Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $\theta$ of the h-BN with respect to the graphene layers with different physical…

All local electronic properties of graphene on a hexagonal boron nitride (hBN) substrate exhibit spatial moir\'e patterns related to lattice constant and orientation differences between shared triangular Bravais lattices. We apply a…

介观与纳米尺度物理 · 物理学 2015-06-18 Ashley M. DaSilva , Jeil Jung , Shaffique Adam , Allan H. MacDonald

Using density functional theory (DFT), we study charge transfer between hexagonal boron nitride (h-BN) point defects and graphene in h-BN/graphene heterostructures for a range of intrinsic defects -- nitrogen vacancy, boron vacancy,…

材料科学 · 物理学 2023-11-09 Madhava Krishna Prasad , Oras A. Al-Ani , Jonathan P. Goss , Jonathan D. Mar

We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is…

介观与纳米尺度物理 · 物理学 2015-05-14 Melinda Y. Han , Juliana C. Brant , Philip Kim

The structural similarity between hexagonal boron nitride (h-BN) and graphene nanoribbons allows for the formation of heterojunctions with small chain stress. The combination of the insulation nature of the former and the quasi-metallic…

We present first principles study of thermoelectric transport properties of sandwiched heterostructure of Graphene (G)/hexagonal Boron Nitride (BN)/G, based on Boltzmann transport theory for band electrons using the bandstructure calculated…

介观与纳米尺度物理 · 物理学 2016-03-23 Ransell D'Souza , Sugata Mukherjee

Vertical integration of two-dimensional materials has recently emerged as an exciting method for the design of novel electronic and optoelectronic devices. Using density functional theory, we investigatethe structural and electronic…

材料科学 · 物理学 2015-06-25 Yongqing Cai , Gang Zhang , Yong-Wei Zhang

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and…

介观与纳米尺度物理 · 物理学 2020-06-19 J. Sonntag , J. Li , A. Plaud , A. Loiseau , J. Barjon , J. H. Edgar , C. Stampfer

The thermoelectric properties of in plane heterostructures made of Graphene and hexagonal Boron Nitride (BN) have been investigated by means of atomistic simulation. The heterostructures consist in armchair graphene nanoribbons to the sides…

介观与纳米尺度物理 · 物理学 2015-08-19 Van-Truong Tran , Jérôme Saint Martin , Philippe Dollfus

We investigate the electronic and optical properties of lateral heterostructures made of alternated armchair ribbons of graphene and hexagonal boron nitride. It is known that the gapwidth of these heterostructures can be classified into…

材料科学 · 物理学 2026-01-22 Elisa Serrano Richaud , Sylvain Latil , Lorenzo Sponza

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely…

Nearly aligned graphene on hexagonal boron nitride (G/BN) can be accurately modeled by a Dirac Hamiltonian perturbed by smoothly varying moir\'e pattern pseudospin fields. Here, we present the moir\'e-band model of G/BN for arbitrary small…

介观与纳米尺度物理 · 物理学 2017-09-06 Jeil Jung , Evan Laksono , Ashley M. DaSilva , Allan H. MacDonald , Marcin Mucha-Kruczyński , Shaffique Adam

In this Letter, we derive an effective theory of graphene on a hexagonal Boron Nitride (h-BN) substrate. We show that the h-BN substrate generically opens a spectral gap in graphene despite the lattice mismatch. The origin of that gap is…

介观与纳米尺度物理 · 物理学 2012-11-12 M. Kindermann , Bruno Uchoa , D. L. Miller

We present electronic transport measurements through short and narrow (30x30 nm) single layer graphene constrictions on a hexagonal boron nitride substrate. While the general observation of Coulomb-blockade is compatible with earlier work,…

介观与纳米尺度物理 · 物理学 2015-01-30 Dominik Bischoff , Florian Libisch , Joachim Burgdörfer , Thomas Ihn , Klaus Ensslin

By investigating the optoelectronic properties of prototypical graphene/hexagonal boron nitride (h-BN) heterostructures, we demonstrate how a nanostructured combination of these materials can lead to a dramatic enhancement of light-matter…

We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel…

Among the van der Waals heterostructures, graphene/h-BN heterostructure is an appropriate candidate for 2D nanoelectronic devices. In this paper, using non-equilibrium molecular dynamics simulation approach, heat transport in bilayer…

材料科学 · 物理学 2022-05-31 M. Sadegh Alborzi , Ali Rajabpour

Graphene/hexagonal boron nitride (hBN) moir\'e superlattices have attracted interest for use in the study of many-body effects and fractal physics in Dirac fermion systems. Many exotic transport properties have been intensively examined in…

介观与纳米尺度物理 · 物理学 2020-04-22 Takuya Iwasaki , Shu Nakaharai , Yutaka Wakayama , Kenji Watanabe , Takashi Taniguchi , Yoshifumi Morita , Satoshi Moriyama

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report,…

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