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Despite many efforts to rationalize the strongly correlated electronic ground states in doped Mott insulators, the nature of the doping induced insulator to metal transition is still a subject under intensive investigation. Here we probe…

Superconductivity emerges from the cuprate antiferromagnetic Mott state with hole doping. The resulting electronic structure is not understood, although changes in the state of oxygen atoms appear paramount. Hole doping first destroys the…

超导电性 · 物理学 2012-05-24 Y. Kohsaka , T. Hanaguri , M. Azuma , M. Takano , J. C. Davis , H. Takagi

The phenomenon of Mott insulation involves the localization of itinerant electrons due to strong local repulsion. Upon doping, a pseudogap (PG) phase emerges - marked by selective gapping of the Fermi surface without conventional symmetry…

The problem of doping Mott insulators is of fundamental importance and long-standing interest in the study of strongly correlated electron systems. The advent of semiconductor based moir\'e materials opens a new ground for simulating the…

强关联电子 · 物理学 2024-01-09 Yang Zhang , Liang Fu

We study the evolution of the single-particle spectrum with electron doping in a scheme which adds multiple exchange of transverse spin excitations to the mean-field antiferromagnetic insulator. Away from half-filling small Fermi surface…

强关联电子 · 物理学 2009-11-10 Hiroaki Kusunose , T. M. Rice

By means of oxide molecular beam epitaxy with shutter-growth mode, we have fabricated a series of electron-doped (Sr1-xLax)2IrO4(001)(x = 0, 0.05, 0.1 and 0.15) single crystalline thin films and then investigated the doping dependence of…

强关联电子 · 物理学 2015-04-27 M. Y. Li , Z. T. Liu , H. F. Yang , J. L. Zhao , Q. Yao , C. C. Fan , J. S. Liu , B. Gao , D. W. Shen , X. M. Xie

We apply the recently developed slave fermion approach to study the doped Mott insulator in the one-band Hubbard and Hubbard-Heisenberg models. Our results produce several subtle features in the electron spectra and confirm the key role of…

强关联电子 · 物理学 2023-10-19 Zhuoqing Long , Jiangfan Wang , Yi-feng Yang

Within the framework of the fermion-spin theory, the charge transport in the doped Mott insulators on a honeycomb lattice is studied by taking into account the pseudogap effect. It is shown that the conductivity spectrum in the low-doped…

超导电性 · 物理学 2016-05-04 Xixiao Ma , Yu Lan , Ling Qin , Shiping Feng

Understanding the doping evolution from a Mott insulator to a superconductor probably holds the key for resolving the mystery of unconventional superconductivity in copper oxides. To elucidate the evolution of the electronic state starting…

超导电性 · 物理学 2023-09-19 Han Li , Zhaohui Wang , Shengtai Fan , Huazhou Li , Huan Yang , Hai-Hu Wen

The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator…

强关联电子 · 物理学 2011-07-12 Reza Nourafkan , Frank Marsiglio

The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that…

By paying special attention to the fact that the doped holes induce deformation of CuO6 octahedrons (or CuO5 pyramids) in cuprate superconductors, we develop a non-rigid band theory treating doping-induced alterations of energy-band…

超导电性 · 物理学 2016-11-11 Hiroshi Kamimura , Jaw-Shen Tsai , Osamu Sugino , Kunio Ishida , Hideki Ushio

Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…

强关联电子 · 物理学 2009-11-10 Tudor D. Stanescu , Philip Phillips

The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among possible competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of…

We study the effects of dilute La and Rh doping on the electronic structure of the relativistic Mott insulator Sr$_2$IrO$_4$ using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site…

The pseudogap, d-wave superconductivity and electron-boson coupling are three intertwined key ingredients in the phase diagram of the cuprates. Sr$_2$IrO$_4$ is a 5d-electron counterpart of the cuprates in which both the pseudogap and a…

It is widely believed that high-temperature superconductivity in the cuprates emerges from doped Mott insulators. The physics of the parent state seems deceivingly simple: The hopping of the electrons from site to site is prohibited because…

We study the effect of carrier doping to the Mott insulator on the Penrose tiling, aiming at clarifying the interplay between quasiperiodicity and strong electron correlations. We numerically solve the Hubbard model on the Penrose-tiling…

强关联电子 · 物理学 2022-10-06 Shiro Sakai , Nayuta Takemori

Recent ARPES measurements on the electron-doped cuprate Nd_{2-x}Ce_xCuO_4 can be interpreted in a mean field model of uniform doping of an antiferromagnet, with the Mott gap closing near optimal doping. Mode coupling calculations confirm…

超导电性 · 物理学 2017-08-23 R. S. Markiewicz

High temperature superconductivity in cuprate superconductors is generally considered to be generated from doping the Mott insulators. The fundamental nature of the doped parent compounds as well as the microscopic origin of electron…