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We report the use of novel, capacitively terminated coplanar waveguide (CPW) resonators to measure the quadratic Stark shift of phosphorus donor qubits in Si. We confirm that valley repopulation leads to an anisotropic spin-orbit Stark…

介观与纳米尺度物理 · 物理学 2015-06-03 A. J. Sigillito , A. M. Tyryshkin , S. A. Lyon

The electronic structure of the three-particle donor bound exciton (D$^0$X) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approximation. The calculations yield a transition energy close to…

介观与纳米尺度物理 · 物理学 2015-10-02 Rajib Rahman , Jan Verduijn , Yu Wang , Chunming Yin , Gabriele De Boo , Gerhard Klimeck , Sven Rogge

Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear…

材料科学 · 物理学 2010-11-16 Eisuke Abe , Akira Fujimoto , Junichi Isoya , Satoshi Yamasaki , Kohei M. Itoh

Over the past decade donor spin qubits in isotopically enriched $^{28}$Si have been intensely studied due to their exceptionally long coherence times. More recently bismuth donor electron spins have become popular because Bi has a large…

量子物理 · 物理学 2016-03-30 T. Yasukawa , A. J. Sigillito , B. C. Rose , A. M. Tyryshkin , S. A. Lyon

We propose a method to measure the hyperfine vectors between a nitrogen-vacancy (NV) center and an environment of interacting nuclear spins. Our protocol enables the generation of tunable electron-nuclear coupling Hamiltonians while…

量子物理 · 物理学 2016-05-12 Zhen-Yu Wang , Jan F. Haase , Jorge Casanova , Martin B. Plenio

We study single electron transport across a single Bi dopant in a Silicon Nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin $I=9/2$ affects the transport characteristics of the device. In the sequential…

介观与纳米尺度物理 · 物理学 2013-08-19 F. Delgado , R. Aguado , J. Fernández-Rossier

We present non-conventional electron spin resonance (ESR) experiments using microfabricated superconducting waveguides. We show that a very broad frequency range, from 0.5 to 40 GHz, becomes accessible with a high frequency accuracy of less…

介观与纳米尺度物理 · 物理学 2014-01-13 C. Clauss , D. Bothner , D. Koelle , R. Kleiner , L. Bogani , M. Scheffler , M. Dressel

We demonstrate an efficient control of $^{29}$Si nuclear spin orientation for specific lattice sites near $^{31}$P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden…

We present the detailed study of the spin kinetics of the nitrogen (N) donor electrons in 6H SiC wafers grown by Lely method and by sublimation "sandwich method" (SSM) with a donor concentration of about 10^17 cm^-3 at T = 10-40 K. The…

材料科学 · 物理学 2016-04-12 D. Savchenko , B. Shanina , E. Kalabukhova , A. Poeppl , J. Lancok , E. Mokhov

Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for…

Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information…

介观与纳米尺度物理 · 物理学 2019-01-11 J. van der Heijden , T. Kobayashi , M. G. House , J. Salfi , S. Barraud , R. Lavieville , M. Y. Simmons , S. Rogge

Strain provides a powerful knob to tailor the electronic properties of semiconductors. Simple yet accurate approximations that capture strain effects in demanding simulations of mesoscopic nanostructures are therefore highly desirable.…

材料科学 · 物理学 2025-09-17 Samuel D. Escribano , Alfredo Levy Yeyati , Elsa Prada

Nitrogen vacancy (NV) centers can couple to confined phonons in diamond mechanical resonators via the effect of lattice strain on their energy levels. Access to the strong spin-phonon coupling regime with this system requires resonators…

A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or…

Solid-state spin ensembles addressed via superconducting circuits are promising candidates for quantum memory applications, offering multimodal storage capability and second-long coherence times at their clock transition. Implementing…

量子物理 · 物理学 2025-10-23 Yutian Wen , V. Ranjan , T. Lorriaux , D. Vion , B. Huard , A. Bienfait , E. Flurin , P. Bertet

Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange…

介观与纳米尺度物理 · 物理学 2018-09-05 J. Salfi , B. Voisin , A. Tankasala , J. Bocquel , M. Usman , M. Y. Simmons , L. C. L. Hollenberg , R. Rahman , S. Rogge

Nuclear spins in the solid state environment of diamond are highly coherent, but difficult to rapidly control due to the small nuclear gyromagnetic ratio. Here we demonstrate a more than 50-fold enhancement of the effective nuclear…

介观与纳米尺度物理 · 物理学 2016-08-05 S. Sangtawesin , J. R. Petta

We study single- and multi-quantum transitions of the nuclear spins of ionized arsenic donors in silicon and find quadrupolar effects on the coherence times, which we link to fluctuating electrical field gradients present after the…

量子物理 · 物理学 2017-06-21 David P. Franke , Moritz P. D. Pflüger , Kohei M. Itoh , Martin S. Brandt

Optically addressable solid-state spins have been proposed as robust radiofrequency (RF)-optical transducers sensitive to a specific RF frequency tuned by an external static magnetic field, but often require precise field alignment with the…

We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress…