We study single electron transport across a single Bi dopant in a Silicon Nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin I=9/2 affects the transport characteristics of the device. In the sequential tunneling regime we find that at, temperatures in the range of 100mK, dI/dV curves reflect the zero field hyperfine splitting as well as its evolution under an applied magnetic field. Our non-equilibrium quantum simulations show that nuclear spins can be partially polarized parallel or antiparallel to the electronic spin just tuning the applied bias.
@article{arxiv.1208.0548,
title = {Probing a Single Nuclear Spin in a Silicon Single Electron Transistor},
author = {F. Delgado and R. Aguado and J. Fernández-Rossier},
journal= {arXiv preprint arXiv:1208.0548},
year = {2013}
}