English

Charge Sensitivity of Superconducting Single-Electron Transistor

Condensed Matter 2009-10-28 v2

Abstract

It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either SISISSISIS or NISINNISIN type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of a similar transistor made of normal metals or semiconductors. The reason is that the superconducting energy gap, in contrast to the Coulomb blockade, is not smeared by the finite temperature. We discuss also the increase of the maximum operation temperature due to superconductivity and a new peak-like feature on the IVI-V curve of SISISSISIS structures.

Keywords

Cite

@article{arxiv.cond-mat/9604021,
  title  = {Charge Sensitivity of Superconducting Single-Electron Transistor},
  author = {Alexander N. Korotkov},
  journal= {arXiv preprint arXiv:cond-mat/9604021},
  year   = {2009}
}

Comments

One reference added and minor difficulty with Postscript file fixed. 11 pages, RevTex, 3 figures (eps); Submitted to Appl. Phys. Lett

R2 v1 2026-07-22T11:52:46.436Z