相关论文: Ultra-low Power Nanoelectromechanical Memory Based…

A pronounced irreversible electro-optical response (memory effect) has been recently observed for nematic liquid crystal (LC) EBBA doped by multi-walled carbon nanotubes (MWCNTs) near the percolation threshold of the MWCNTs (0.02-0.05 wt.…

As conventional silicon technology is approaching its fundamental material and physical limits with continuous scaling, there is a growing push to look for new platform to design memory circuits for nanoelectronic applications. In this…

Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their…

We present a simple nanodevice that can operate in two modes: i) three-state memory and ii) reading device. The nanodevice is fabricated with an array of ordered triangular-shaped nanomagnets embedded in a superconducting thin film. The…

Neurons with internal memory have been proposed for biological and bio-inspired neural networks, adding interesting functionality. We propose and model a nanoscale optoelectronic neural node with charge-based time-limited memory and signal…

Single-walled carbon nanotubes (SWNTs) have many interesting properties; they may be metallic or semiconducting depending on their diameter and helicity of the graphene sheet. Hydrostatic or quasi-hydrostatic high pressures can probe many…

Cryo-computing - both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenge both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not…

We report ultra-high density assembly of aligned single walled carbon nanotubes (SWNTs) two dimensional arrays via ac dielectrophoresis using high quality surfactant free and stable SWNT solutions. After optimization of frequency and…

Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic…

We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 level selectivity. Selectivity and low-power solutions are…

Phase change memory (PCM) devices are known to reduce in power consumption as the bit volume and contact area of their electrodes are scaled down. Here, we demonstrate two types of low-power PCM devices with lateral graphene ribbon…

We present a general approach to the computational design of nanostructured chemical sensors. The scheme is based on identification and calculation of microscopic descriptors (design parameters) which are used as input to a thermodynamic…

Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage…

We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…

Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device…

Efforts aimed at large-scale integration of nanoelectronic devices that exploit the superior electronic and mechanical properties of single-walled carbon nanotubes (SWCNTs) remain limited by the difficulties associated with manipulation and…

Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…

Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…

We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube (SWNT). The diode's turn-on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages, which is ~6…

Using carbon nanotubes (CNTs) produced by chemical vapor deposition, we have explored different strategies for the preparation of carbon nanotube devices suited for electrical and mechanical measurements. Though the target device is a…