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相关论文: Origin of the Extremely Large Magnetoresistance in…

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We report the observation of an extreme magnetoresistance (XMR) in HoBi with a large magnetic moment from Ho f-electrons. Neutron scattering is used to determine the magnetic wave vectors across several metamagnetic (MM) transitions on the…

材料科学 · 物理学 2018-08-01 H. -Y. Yang , J. Gaudet , A. A. Aczel , D. E. Graf , P. Blaha , B. D. Gaulin , Fazel Tafti

Weyl type-II fermions are massless quasiparticles that obey the Weyl equation and which are predicted to occur at the boundary between electron- and hole-pockets in certain semi-metals, i.e. the (W,Mo)(Te,P)$_2$ compounds. Here, we present…

介观与纳米尺度物理 · 物理学 2017-09-20 R. Schönemann , N. Aryal , Q. Zhou , Y. -C. Chiu , K. -W. Chen , T. J. Martin , G. T. McCandless , J. Y. Chan , E. Manousakis , L. Balicas

Pulsed field measurements of the Hall resistivity and magnetoresistance of underdoped YBa2Cu4O8 are analyzed self-consistently using a simple model based on coexisting electron and hole carriers. The resultant mobilities and Hall numbers…

We report on a systematic study of Hall effect using high quality single crystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c. The residual resistivity ratio of 1330 and the large magnetoresistance of 1.5\times10^6 %…

材料科学 · 物理学 2017-10-03 Rajveer Jha , Ryuji Higashinaka , Tatsuma D. Matsuda , Raquel A. Ribeiro , Yuji Aoki

We study the magnetoresistance, \delta\rho_{xx}(B)/\rho_0, of a high-mobility 2D electron gas in the domain of magnetic fields, B, intermediate between the weak localization and the Shubnikov-de Haas oscillations, where…

介观与纳米尺度物理 · 物理学 2008-03-17 T. A. Sedrakyan , M. E. Raikh

Slow oscillations of the in-plane magnetoresistance are observed in the rare-earth tritellurides and proposed as an effective tool to determine the parameters of electronic structure in various strongly anisotropic quasi-two-dimensional…

强关联电子 · 物理学 2020-09-02 P. D. Grigoriev , A. A. Sinchenko , P. Lejay , O. Leynaud , V. N. Zverev , P. Monceau

After growing successfully high quality VP$_2$ single crystals, we studied systematically their longitudinal $\rho_{xx}(T)$ and Hall resistivity $\rho_{yx}(T)$ at various magnetic fields, combining the electronic band and Fermi surface (FS)…

Complementary angle-resolved photoemission and bulk-sensitive k-resolved resonant inelastic x-ray scattering of divalent hexaborides reveal a >1 eV X-point gap between the valence and conduction bands, in contradiction to the band overlap…

Weyl semimetals are emerging to become a new class of quantum-material platform for various novel phenomena. Especially, the Weyl orbit made from surface Fermi arcs and bulk relativistic states is expected to play a key role in…

介观与纳米尺度物理 · 物理学 2022-03-29 Xiao-Xiao Zhang , Naoto Nagaosa

We have investigated the magnetoresistance (MR) and Hall resistivity properties of the single crystals of tantalum sulfide, Ta3S2, which was recently predicted to be a new type II Weyl semimetal. Large MR (up to ~8000% at 2 K and 16 T),…

材料科学 · 物理学 2016-11-11 D. Chen , L. X. Zhao , J. B. He , H. Liang , S. Zhang , C. H. Li , L. Shan , C. Ren , S. C. Wang , Z. A. Ren , G. F. Chen

Materials featuring hypervalent bismuth motifs have generated immense interest due to their extraordinary electronic structure and exotic quantum transport. In this study, we synthesized high-quality single crystals of La3ScBi5…

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same…

材料科学 · 物理学 2014-11-26 I. Pletikosić , Mazhar N. Ali , A. Fedorov , R. J. Cava , T. Valla

We performed comprehensive theoretical and experimental studies of the electronic structure and the Fermi surface topology of two novel quantum materials, MoSi$_2$ and WSi$_2$. The theoretical predictions of the electronic structure in the…

Recently, a new group of layered transition-metal tetra-chalcogenides were proposed, via first principles calculations, to correspond to a new family of Weyl type-II semimetals with promising topological properties in the bulk as well as in…

For Sm(3+) ions in a vast majority of metallic systems, the following interesting scenario has been conjured up for long, namely, a magnetic lattice of tiny self (spin-orbital) compensated 4f-moments exchange coupled (and phase reversed) to…

材料科学 · 物理学 2015-05-19 P. D. Kulkarni , S. K. Dhar , A. Provino , P. Manfrinetti , A. K. Grover

The I-Mn-V antiferromagnet, NaMnBi, develops a very large positive magnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing a semiconductor-to-metal transition (SMT). In the absence of an SMT, a modest (20%) MR is achieved.…

材料科学 · 物理学 2020-07-15 Aaron Wegner , Despina Louca , Keith Taddei , Joerg Neuefeind

Magneto-transport measurements of Shubnikov-de Haas (SdH) oscillations have been performed on two-dimensional electron gases (2DEGs) confined in CdTe and CdMnTe quantum wells. The quantum oscillations in CdMnTe, where the 2DEG interacts…

介观与纳米尺度物理 · 物理学 2015-08-19 J. Kunc , B. A. Piot , D. K. Maude , M. Potemski , R. Grill , C. Betthausen , D. Weiss , V. Kolkovsky , G. Karczewski , T. Wojtowicz

We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in…

介观与纳米尺度物理 · 物理学 2009-11-07 V. M. Pudalov , M. E. Gershenson , H. Kojima , N. Butch , E. M. Dizhur , G. Brunthaler , A. Prinz , G. Bauer

Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered…

介观与纳米尺度物理 · 物理学 2015-05-19 H. G. Johnson , S. P. Bennett , R. Barua , L. H Lewis , D. Heiman

We report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG…