相关论文: A valley valve and electron beam splitter

In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…

Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…

We introduce the concept of valley-layer coupling (VLC) in two-dimensional materials, where the low-energy electronic states in the emergent valleys have valley-contrasted layer polarization such that each state is spatially localized on…

The exploration of binary valley degree of freedom in topological photonic systems has inspired many intriguing optical phenomena such as photonic Hall effect, robust delay lines, and perfect out-coupling refraction. In this work, we…

Using the B\"{u}ttiker-Landauer formulation of transport theory in the linear response regime, the valley currents and non-local resistances of bilayer graphene nanostructures with broken inversion symmetry are calculated. It is shown that…

Bilayer graphene bears an eight-fold degeneracy due to spin, valley and layer symmetry, allowing for a wealth of broken symmetry states induced by magnetic or electric fields, by strain, or even spontaneously by interaction. We study the…

Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (VGS) are proposed, which can be achieved in valleytronic…

We consider tunneling transport between two parallel graphene sheets where one is a single-layer sample and the other one a bilayer. In the presence of an in-plane magnetic field, the interplay between combined energy and momentum…

Magnetic barriers in graphene are not easily tunable. However, introducing both electric and magnetic fields, provides tunable and far more controllable electronic states in graphene. Here we study such systems. A one-dimensional channel…

The tunnel current (TC) and valley current (VC) are crucial in realizing high-speed and energy-saving in next-generation devices. This paper presents the TC and VC link in the partially overlapped graphene. Under the vertical electric…

Intrinsic Hall conductivity, emerging when chiral symmetry is broken, is at the heart of future low energy consumption devices because it can generate non-dissipative charge neutral current. A symmetry breaking state is also induced by…

Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring…

The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for…

Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…

Electrons in two-dimensional materials possess an additional quantum attribute, the valley pseudospin, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$ -- analogous to the spin up and spin down. The majority of research to achieve…

We report that an external electric field applied normal to bilayers of transition-metal dichalcogenides TX2, M = Mo, W, X = S, Se, creates significant spin-orbit splittings and reduces the electronic band gap linearly with the field…

Kondo physics and heavy-fermion behavior have been predicted and observed in moir\'e materials. The electric tunability of moir\'e materials allows an in-situ study of Kondo lattices' phase diagrams, which is not possible with their…

Plasma photonic crystals designed in this paper are composed of gas discharge tubes to control the flow of electromagnetic waves. The band structures calculated by the finite element method are consistent with the experimental results in…

Valley polarization and altermagnetism are two emerging fundamental phenomena in condensed matter physics, offering unprecedented opportunites for information encoding and processing in novel energy-efficient devices. By coupling valley and…

We propose a spin valve device based on the interplay of a modulated spin-orbit interaction and a uniform external magnetic field acting on a quantum wire. Half-metal phases, where electrons with only a selected spin polarization exhibit…