相关论文: A valley valve and electron beam splitter

Bilayer graphene in a perpendicular electric field can host domain walls between regions of reversed field direction or interlayer stacking. The gapless modes propagating along these domain walls, while not strictly topological,…

An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies…

In a number of widely-studied materials, such as Si, AlAs, Bi, graphene, MoS2, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spin-like degree of freedom at the degenerate conduction band minima, also…

Spin and valley are two fundamental properties of electrons in crystals. The similarity between them is well understood in valley-contrasting physics established decades ago in two-dimensional (2D) materials like graphene--with broken…

The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still…

This work investigates the feasibility of electrical valley filtering for holes in transition metal dichalcogenides. We look specifically into the scheme that utilizes a potential barrier to produce valley-dependent tunneling rates, and…

The rise of graphene opens a new door to qubit implementation, as discussed in the recent proposal of valley pair qubits in double quantum dots of gapped graphene (Wu et al., arXiv: 1104.0443 [cond-mat.mes-hall]). The work here presents the…

Two dimensional electronic systems under strong magnetic field form quantum Hall (QH) edge states, which propagate along the boundary of a sample with a dissipationless current. Engineering the pathway of these propagating one-dimensional…

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an…

Here we propose BC$_3$, a graphene derivative that has been synthesized, as a platform to realize exotic quantum phases by introducing a moir\'e pattern with mismatched stacking. In twisted bilayer BC$_3$, it is shown that a crossover from…

We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…

In this work, we investigate theoretically and demonstrate experimentally the existence of valley-Hall edge states in the in-plane dynamics of honeycomb lattices with bi-valued strut thickness. We exploit these states to achieve non-trivial…

An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched…

With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We…

The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…

Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to…

Valley filters are crucial to any device exploiting the valley degree of freedom. By using an atomistic model, we analyze the mechanism leading to the valley filtering produced by a line-defect in graphene and show how it can be inverted by…

Interface states in a silicon/barrier junction break the silicon valley degeneracy near the interface, a desirable feature for some Si quantum electronics applications. Within a minimal multivalley tight-binding model in one dimension, we…

We describe an angularly asymmetric interface-scattering mechanism which allows to spatially separate the electrons in the two low-energy valleys of bilayer graphene. The effect occurs at electrostatically defined interfaces separating…