相关论文: Comparative Analysis of Current Component in InGaN…

The electron-phonon coupling in self-assembled InGaAs quantum dots is relatively weak at low light intensities, which means that the zero-phonon line in emission is strong compared to the phonon sideband. However, the coupling to acoustic…

To simulate the influence of pendulum effect in hollow cathode configuration on a current-voltage characteristic it is proposed to consider a plane glow discharge in one-dimensional space configuration with two plane parallel cathodes and…

The paper proposes the method to analyze the internal dynamics of nanoscopic systems by periodic modulation of the electrochemical potentials of the attached leads and measuring the time-averaged current. The idea is presented using the…

The theoretical analysis of topological insulators (TIs) has been traditionally focused on infinite homogeneous crystals with band gap in the bulk and nontrivial topology of their wavefunctions, or infinite wires whose boundaries host…

We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with…

We report reproducible fabrication of InP-InAsP nanowire light emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the…

We present in this letter a theoretical analysis of the current-voltage (I-V) characteristics of a hybrid normal-superconducting device consisting of a quantum dot and two electrodes that can be either normal or superconducting. We show…

III-V nitride semiconductors, represented by GaN, have attracted significant research attention. Driven by the growing interest in smart micro-displays, there is a strong desire to achieve enhanced light output from even smaller…

InGaN-based visible LEDs find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells…

InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer…

We demonstrate how the presence of gain-loss contrast between two coupled identical resonators can be used as a new degree of freedom to enhance the modulation frequency response of laser diodes. An electrically pumped microring laser…

The interband and intraband conductivities of doped graphene were theoretically investigated beyond the linear response. The new dependences of induced currents on frequency and amplitude of external electric field, the graphene temperature…

GaN is expected to be a key material for next-generation electronics due to its interesting properties. However, the current collapse poses a challenge to the application of GaN FETs to electronic devices. In this study, we investigate the…

We present a comprehensive study of the optical properties of InAs/InP self-assembled quantum dots (QDs) using an empirical pseudopotential method and configuration interaction treatment of the many-particle effects. The results are…

Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a…

We present a novel waveguide design that incorporates a split-diode structure, allowing independent electrical control of transition energies of multiple emitters over a wide range with minimal loss in waveguide coupling efficiency. We use…

We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the…

We study the current through a quantum wire side coupled to a quantum dot, and compare it with the case of an embedded dot. The system is modeled by the Anderson Hamiltonian for a linear chain, with one atom either coupled to (side-dot) or…

InGaN light-emitting diodes (LEDs) are more efficient and cost effective than incandescent and fluorescent lighting, but lattice mismatch limits the thickness of InGaN layers that can be grown on GaN without performance-degrading…

We derive and employ a semi-classical Langevin equation obtained from path-integrals to describe the ionic dynamics of a molecular junction in the presence of electrical current. The electronic environment serves as an effective…