相关论文: Comparative Analysis of Current Component in InGaN…
In this work, we have investigated conduction through an artificial molecule comprising two coupled quantum dots. The question addressed is the role of inter-dot coupling on electronic transport. We find that the current through the…
The changes in excitation dependence of efficiency with temperature is modeled for a wurtzite InGaN light-emitting diode. The model incorporates bandstructure changes with carrier density arising from screening of quantum-confined Stark…
Laser diodes based on solution-processable materials could benefit numerous technologies including integrated electronics and photonics, telecommunication, and medical diagnostics. An attractive system for implementing these devices is…
We propose a new mode of operation of an electron pump consisting of two weakly coupled quantum dots connected to reservoirs. An electron can be transferred within the device at zero bias voltage when it is subjected to electromagnetic…
The photovoltaic properties of (0001) n-InGaN/p-GaN single heterojunctions were investigated numerically and compared with those of conventional p-GaN/i-InGaN/n-GaN structures, employing realistic material parameters. This alternative…
The phosphide-based III-V semiconductors InP, GaP, and In$_{0.5}$Ga$_{0.5}$P are promising materials for solar panels in outer space and radioisotope batteries, for which lifetime is a major issue. In order to understand high radiation…
Low-Gain Avalanche Diodes (LGADs) provide moderate internal gain and time resolutions of a few tens of picoseconds, making them a key technology for ultrafast timing in high-energy physics and beyond. However, both their gain and timing…
Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs…
We investigate the electronic structure of the InAs/InP quantum dots using an atomistic pseudopotential method and compare them to those of the InAs/GaAs QDs. We show that even though the InAs/InP and InAs/GaAs dots have the same dot…
The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means…
Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and double quantum well interband tunnel heterojunctions are simulated rigorously using the non-equilibrium Green's function formalism for coherent and dissipative…
We identify experimental signatures in the current-voltage (I-V) characteristics of weakly contacted molecules directly arising from excitations in their many electron spectrum. The current is calculated using a multielectron master…
The performances of various configurations of InGaN solar cells are compared using nextnano software. Here we compare a flat base graded wall GaN/InGaN structure, with an InxGa1-xN well with sharp GaN contact layers, and an InxGa1-xN…
A new ion guide has been modeled and tested for the production of a low energy ($\approx$ 40 kV) ion beam of daughter products of alpha-emitting isotopes. The guide is designed to evacuate daughter recoils originating from the…
Ionizing radiation has been shown to reduce the performance of superconducting quantum circuits. In this report, we evaluate the expected contributions of different sources of ambient radioactivity for typical superconducting qubit…
Organic light-emitting diodes (OLEDs) are central to modern display technologies and are promising candidates for low-cost energy-efficient lighting. Their performance is determined by numerous, intricate fabrication parameters, but not…
We investigated the current-voltage characteristic of InAs/GaAs quantum dot intermediate band solar cells (QD IBSCs) with different n-type doping density in the QD layer. The n-type doping evidently increases the open circuit voltage,…
The transport properties of a octane-dithiol (ODT) molecule coupled to Au(001) leads are analyzed using density functional theory and non-equilibrium Green functions. It is shown that a symmetric molecule can turn into a diode under…
The effect of electron correlation on the photocurrent of self-assembled InAs/InGaAs quantum dot infrared photo-detector (QDIPs) is studied. It is found that Coulomb interaction and level mixing in the many-body open system lead to double…
Radiation-induced defects can have a significant impact on the longevity and performance of semiconductor devices. We present an Atomistically Informed Device Engineering (AIDE) method that integrates first-principles defect properties and…