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We have developed a simple and reliable technique for two-terminal transport measurements of free-standing wire-like objects. The method is based on the low-energy electron point source microscope. The field emission tip of the microscope…

介观与纳米尺度物理 · 物理学 2009-11-07 P. Dorozhkin , H. Nejoh , D. Fujita

The investigation of optoelectronic devices based on two-dimensional materials and their heterostructures is a very active area of investigation with both fundamental and applied aspects involved. We present a description of a home-built…

介观与纳米尺度物理 · 物理学 2017-05-05 Christoph Reuter , Riccardo Frisenda , Der-Yuh Lin , Tsung-Shine Ko , David Perez de Lara , Andres Castellanos-Gomez

Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling…

介观与纳米尺度物理 · 物理学 2015-06-16 R. Thamankar , T. L. Yap , K. E. J. Goh , C. Troadec , C. Joachim

Two-dimensional (2D) materials with extraordinary electrical properties, hold promising for large-scale, flexible electronics. However, their device performance could be hindered due to the excessive defects introduced via traditional…

Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental…

Two dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDC) have received extensive research interests and investigations in the past decade. In this research, we report the first experimental measurement of…

材料科学 · 物理学 2024-12-10 Jun Liu , Mengqi Fang , Eui-Hyeok Yang , Xian Zhang

Heterostructures involving two-dimensional (2D) transition metal dichalcogenides and other materials such as graphene have a strong potential to be the fundamental building block of many electronic and opto-electronic applications. The…

In situ electron microscopy is a key tool for understanding the mechanisms driving novel phenomena in 2D structures. Unfortunately, due to various practical challenges, technologically relevant 2D heterostructures prove challenging to…

We propose a novel probe technique capable of performing local low-temperature spectroscopy on a 2D electron system (2DES) in a semiconductor heterostructure. Motivated by predicted spatially-structured electron phases, the probe uses a…

介观与纳米尺度物理 · 物理学 2011-01-06 Adam Sciambi , Matthew Pelliccione , Seth R. Bank , Arthur C. Gossard , David Goldhaber-Gordon

The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area…

材料科学 · 物理学 2014-07-17 Yingnan Liu , Rudresh Ghosh , Di Wu , Ariel Ismach , Rodney Ruoff , Keji Lai

The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…

材料科学 · 物理学 2018-07-04 Igor Neri , Miquel López-Suárez

We report a technique for transferring large areas of the CVD-grown, few-layer MoS2 from the original substrate to another arbitrary substrate and onto holey substrates, in order to obtain free-standing structures. The method consists of a…

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…

介观与纳米尺度物理 · 物理学 2016-10-03 Morteza Kayyalha , Jesse Maassen , Mark Lundstrom , Li Shi , Yong P. Chen

Transfer techniques based on two dimensional (2D) materials and devices offer immense potential towards their industrial integration with the existing silicon based electronics. To achieve high quality devices, there is an urgent…

介观与纳米尺度物理 · 物理学 2023-09-18 Sameer Kumar Mallik , Roshan Padhan , Suman Roy , Mousam Charan Sahu , Sandhyarani Sahoo , Satyaprakash Sahoo

Ultrathin sheets of MoS2 are a newly discovered 2D semiconductor that holds great promise for nanoelectronics. Understanding the pattern of current flow will be crucial for developing devices. In this talk, we present images of current flow…

介观与纳米尺度物理 · 物理学 2017-09-13 Sagar Bhandari , Ke Wang , Kenji Watanabe , Takashi Taniguchi , Philip Kim , Robert M. Westervelt

We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions,…

介观与纳米尺度物理 · 物理学 2013-06-24 Keliang He , Charles Poole , Kin Fai Mak , Jie Shan

We report a device fabrication strategy of making multi-terminal electrical contacts on small (< 1 mm) bulk quantum materials using lithography-based techniques for electrical transport studies. The crystals are embedded in a polymeric…

材料科学 · 物理学 2024-04-23 Huandong Chen , Amir Avishai , Jayakanth Ravichandran

We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS2) crystal onto a piece of paper, similarly to the action of drawing/writing with a pencil on paper. We show that the abrasion between the…

Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…

介观与纳米尺度物理 · 物理学 2020-04-14 Ashby Phillip John , Arya Thenapparambil , Madhu Thalakulam

Atomically thin 2D materials span the common components of electronic circuits as metals, semi-conductors, and insulators, and can manifest correlated phases such as superconductivity, charge density waves, and magnetism. An ongoing…

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