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相关论文: Resistive switching in MoSe$_{2}$/BaTiO$_{3}$ hybr…

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A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for…

Graphene oxide (GO)-based resistive random access memory (RRAM) is one of the most promising emerging non-volatile memories for flexible electronics because of its simple structure and low fabrication cost. The reported switching mechanism…

应用物理 · 物理学 2021-11-09 Ee Wah Lim

We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…

材料科学 · 物理学 2017-06-06 Sven Dirkmann , Thomas Mussenbrock

We investigate the structural, magnetic and spin-state transitions, and magnetocaloric properties of Sr$_{2-x}$La$_x$CoNbO$_6$ ($x=$ 0--1) double perovskites. The structural transition from tetragonal to monoclinic phase at $x$ $\geqslant$…

材料科学 · 物理学 2020-04-21 Ajay Kumar , R. S. Dhaka

We report an unusual sensitivity of electrical resistivity (rho) to an application of a small magnetic field in an intermetallic compound, Tb5Si3, under pressure. In this compound, there is a magnetic field-induced first-order magnetic…

强关联电子 · 物理学 2015-05-14 Kartik K Iyer , E. V. Sampathkumaran

Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However,…

First principles calculations were performed to study the ground state electronic properties of BaFeO3 (BFO) within the density functional theory (DFT). Adopting generalized gradient approximation (GGA) exchange and correlation functional…

材料科学 · 物理学 2007-05-23 Hong-Jian Feng , Fa-Min Liu

Interfaces in oxide heterostructures always provide a fertile ground for emergent properties. Charge transfer from a high energy band to a low energy opponent is naturally expected, as occurring in semiconductor $p$-$n$ junctions. In this…

强关联电子 · 物理学 2015-05-29 Huimin Zhang , Yakui Weng , Xiaoyan Yao , Shuai Dong

The control of chemical exchange across heterointerfaces formed between ultra-thin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. We show that cationic exchange…

Van der Waals (vdW) homo-/hetero-structures are ideal systems for studying interfacial tribological properties such as structural superlubricity. Previous studies concentrated on the mechanism of translational motion in vdW interfaces.…

Proximity effects in two-dimensional (2D) van der Waals heterostructures offer controllable ways to tailor the electronic band structure of adjacent materials. Exchange proximity in particular is important for making materials magnetic…

介观与纳米尺度物理 · 物理学 2019-09-04 Klaus Zollner , Paulo E. Faria Junior , Jaroslav Fabian

Magnetism in doped transition metal dichalcogenide monolayers and van der Waals interfaced materials have motivated the search for sustainable magnetic states at the nanoscale with the prospect of building devices for spintronics…

材料科学 · 物理学 2025-08-05 Rohin Sharma , Diem Thi-Xuan Dang , Lilia M. Woods

The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices…

材料科学 · 物理学 2018-03-29 Thomas Garandel , Rémi Arras , Xavier Marie , Pierre Renucci , Lionel Calmels

Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive switching devices with light-responsive materials is…

应用物理 · 物理学 2020-09-22 Kamalakannan Ranganathan , Mor Feingenbaum , Ariel Ismach

Condensed matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which…

强关联电子 · 物理学 2017-10-11 S. Davis , Z. Huang , K. Han , Ariando , T. Venkatesan , V. Chandrasekhar

We study a high-TC superconducting (YBa2Cu3O7-d) / ferromagnetic (Co/Pt multilayer) hybrid which exhibits resistance switching driven by the magnetic history: depending on the direction of the external field, a pronounced decrease or…

We have measured both magnetoresistance and Hall effect in CeOs$_4$Sb$_{12}$ to clarify the large resistivity state ascribed to the Kondo insulating one and the origin of the phase transition near 0.9 K reported in the specific heat…

强关联电子 · 物理学 2007-05-23 H. Sugawara , S. Osaki , M. Kobayashi , T. Namiki , S. R. Saha , Y. Aoki , H. Sato

The present work focuses on experimental investigations of a bistabile silicon-on-insulator (SOI) micro-ring resonator (MRR). The resonator exploits a continuous-wave operation of the carrier-induced bistability demonstrating a stable…

We report the observation of a magnetic field assisted transient superconducting state in the two dimensional electron gas existing at the interface of LaAlO$_3$/SrTiO$_3$ heterostructures. This metastable state depends critically on the…

Functional oxides and hybrid structures with interfacial spin orbit coupling and the Rashba-Edelsterin effect (REE) are promising materials systems for thermal tolerance spintronic device applications. Here, we demonstrate efficient…

介观与纳米尺度物理 · 物理学 2025-05-15 Mi-Jin Jin , Guang Yang , Doo-Seung Um , Jacob Linder , Jason W. A. Robinson