相关论文: Resistive switching in MoSe$_{2}$/BaTiO$_{3}$ hybr…

A possible mechanism for the resistive switching observed experimentally in Fe/MgO/V/Fe junctions is presented. Ab initio total energy calculations within the local density approximation and pseudopotential theory shows that by moving the…

Using an adapted Sn-flux growth technique we obtained comparatively large CeFeAsO single crystals of better quality than previously reported polycrystals or single crystals, as evidenced by much sharper anomalies at the structural and…

In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission…

Heterostructures of topological insulator Bi$_2$Se$_3$ on transition metal dichalcogenides (TMDCs) offer a new materials platform for studying novel quantum states by exploiting the interplay among topological orders, charge orders and…

Ferroelectric and ferromagnetic orders rarely coexist, and magnetoelectric coupling is even more scarce. A possible avenue for combining these orders is by interface design, where orders formed at the constituent materials can overlap and…

The magnetoresistance (MR) effect in metallic atomic-sized contacts is studied theoretically by means of first-principle electronic structure calculations. We consider three-atom chains formed from Co, Cu, Si, and Al atoms suspended between…

A computational study of the epitaxial Co2MnSi(001)/MgO(001) interface relevant to tunneling magnetoresistive (TMR) devices is presented. Employing ab initio atomistic thermodynamics, we show that the Co- or MnSi-planes of bulk-terminated…

The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…

The mechanism of resistive switching in two-dimensional (2D) semiconductor-based memristors is intriguing, and our conventional knowledge of bulk-oxide based memristors does not apply to these devices. Experimental data indicate that the…

Moir\'e materials, with superlattice periodicity many times the atomic length scale, have enabled the studies of strong electronic correlations and band topology with unprecedented tunability. However, nonvolatile control of the moir\'e…

The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory…

Na$_{3}$Co$_{2}$SbO$_6$ is a promising candidate to realize the Kitaev spin liquid phase since the large Kitaev spin exchange interaction is tunable via the change in electronic structure, such as the trigonal crystal field splitting…

The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…

We report the first formation of the metallic $p$-$n$ junctions, the ferroelectric (Ba,Sr)TiO$_3$ (BST) switched optimally electron-doped ($n$-type) metallic T'-phase superconductor, (La,Ce)$_2$CuO$_4$ (LCCO), and hole-doped ($p$-type)…

BiFeO3 thin films are deposited on FTO coated glass substrates using a simple sol-gel deposition technique, limiting thickness about 70 nm and Ag/BiFeO3/FTO RRAM devices are prepared. The devices showed low-voltage bipolar switching with…

Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum…

One of the most fundamental phenomena and a reminder of the electron's relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction, hardly discernible in…

The intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide interfaces in the ON states to suppress the sneak current at…

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length…

We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$\mu$m spaced Au leads. The structure initially is in highly-conductive state, while it can be…