相关论文: Physics-Based Modeling of TID Induced Global Stati…

Ionizing radiation induces defects in STI oxides in current MOSFETs. These defects may degrade the performance of the MOS circuit. Analytical models for the buildup of these defects during the radiation exposure are available in literature.…

The total ionizing dose irradiation (TID) effects of partially depleted (PD) silicon-on-insulator (SOI)devices which fabricated with a commercial 0.2 um SOI process are investigated. Experimental results show an original phenomenon that the…

The inter-device mismatch and intra-device temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability con-cerned with stochastic oxide charge trapping and…

In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-to-band-tunneling (BTBT) leakage, results in the large increase of total leakage power in a logic circuit. Leakage…

Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…

The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used.…

Direct phase modulation via optical injection is a newly developed method for coding the phase of a gain-switched laser, which meets high requirements placed on transmitters for quantum key distribution: compactness, low losses,…

This paper critically examines the leakage current reduction techniques for improving the performance of poly-Si TFTs used in active matrix liquid crystal displays. This is a first comprehensive study in literature on this topic. The review…

The origin of the Finite Grid Instability (FGI) is studied by resolving the dynamics in the 1D electrostatic Particle-In-Cell (PIC) model in spectral domain at the single particle level and at the collective motion level. The spectral…

Aims: We systematically explore a plausible subset of the parameter space involving effective temperatures and metallicities of the ionizing stellar sources, the effects of the hardening of their radiation by surrounding leaky HII regions…

Leakage currents through insulators received continuous attention for decades, owing to their importance for a wide range of technologies, and interest in their fundamental mechanisms. This work investigates the leakage currents through…

We study the leakage dynamics of charge stored in an ensemble of CdTe quantum dots embedded in a field-effect structure. Optically excited electrons are stored and read out by a proper time sequence of bias pulses. We monitor the dynamics…

This paper depicts the actual variation of gate induced drain leakage current with impurity doping concentration by complete qualitative and quantitative approach. De Casteljaus algorithm is applied to describe the band to band tunneling in…

In lithium ion batteries, Li+ intercalation and processes associated with passivation of electrodes are governed by applied voltages, which are in turn associated with free energy changes of Li+ transfer (Delta G_t) between the solid and…

Bias Temperature Instability (BTI) is a major reliability concern in CMOS technology, especially with High dielectric constant (High-\k{appa}/HK) metal gate (MG) transistors. In addition, the time independent process induced variation has…

We present experimental studies on the charge transfer inefficiency (CTI) of charge-coupled device (CCD) developed for the soft X-ray imaging telescope, Xtend, aboard the XRISM satellite. The CCD is equipped with a charge injection (CI)…

Temperature is known to impact Li-ion battery performance and safety, however, understanding its effect on Li-ion batteries has largely been limited to uniform high or low temperatures. While the insights gathered from such research are…

In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\k{appa} gate dielectric) on the subthreshold characteristics of the tunnel field effect transistors (TFET) for a low operating…

Physical side-channel attacks represent a great challenge for today's chip design. Although attacks on CMOS dynamic power represent a class of state-of-the-art attacks, many other effects potentially affect the security of CMOS chips…

We report on a new class of electromagnetically-driven fluid interface instability. Using the optical radiation pressure of a cw laser to bend a very soft near-critical liquid-liquid interface, we show that it becomes unstable for…