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相关论文: High mobility dry-transferred CVD bilayer graphene

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Large scale synthesis of single layer graphene (SLG) by chemical vapor deposition (CVD) has received a lot of attention recently. However, CVD synthesis of AB stacked bi-layer graphene (BLG) is still a challenging work. Here we report…

Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed…

介观与纳米尺度物理 · 物理学 2020-08-24 Sergio Pezzini , Vaidotas Mišeikis , Simona Pace , Francesco Rossella , Kenji Watanabe , Takashi Taniguchi , Camilla Coletti

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we…

介观与纳米尺度物理 · 物理学 2015-03-31 W. Gannett , W. Regan , K. Watanabe , T. Taniguchi , M. F. Crommie , A. Zettl

We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces…

We report on ballistic transport over more than 28 \mu m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer…

Recently, a contamination-free dry transfer method for graphene grown by chemical vapor deposition (CVD) has been reported that allows to directly pick-up graphene from the copper growth substrate using a flake of hexagonal boron nitride…

We present a transfer-free preparation method for graphene on hexagonal boron nitride (h-BN) crystals by chemical vapor deposition of graphene via a catalytic proximity effect, i.e. activated by a Cu catalyst close-by . We demonstrate the…

We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer (SLG) and bilayer graphene (BLG). We observe spin…

We present inverted spin-valves fabricated from CVD-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the art bilayer graphene spin-valves. This is made possible by a…

介观与纳米尺度物理 · 物理学 2022-07-08 T. Bisswanger , Z. Winter , A. Schmidt , F. Volmer , K. Watanabe , T. Taniguchi , C. Stampfer , B. Beschoten

In this work, we report on the growth of hexagonal boron nitride (hBN) crystals from an iron flux at atmospheric pressure and high temperature and demonstrate that (i) the entire sheet of hBN crystals can be detached from the metal in a…

Integrating high-mobility graphene grown by chemical vapor deposition (CVD) into spin transport devices is one of the key tasks in graphene spintronics. We use a van der Waals pickup technique to transfer CVD graphene by hexagonal boron…

介观与纳米尺度物理 · 物理学 2017-10-11 Marc Drögeler , Luca Banszerus , Frank Volmer , Takashi Taniguchi , Kenji Watanabe , Bernd Beschoten , Christoph Stampfer

In this letter we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using…

介观与纳米尺度物理 · 物理学 2014-01-28 V. E. Calado , Shou-En Zhu , S. Goswami , Q. Xu , K. Watanabe , T. Taniguchi , G. C. A. M. Janssen , L. M. K. Vandersypen

Understanding the competition between first-layer lateral expansion and second-layer nucleation is essential for layer-controlled graphene growth via chemical vapor deposition (CVD). Building on our previous phase diagram framework based on…

材料科学 · 物理学 2026-05-21 Tongtong Wang , Ke Jin , Yishi Zhang , Dajun Shu

We present electronic transport measurements of single- and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm^2/V/s at room temperature and 275 000 cm^2/V/s at 4.2 K. The…

介观与纳米尺度物理 · 物理学 2015-05-30 P. J. Zomer , S. P. Dash , N. Tombros , B. J. van Wees

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic…

介观与纳米尺度物理 · 物理学 2015-06-18 P. J. Zomer , M. H. D. Guimarães , J. C. Brant , N. Tombros , B. J. van Wees

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely…

Bilayer graphene (BLG) with a tunable bandgap appears interesting as an alternative to graphene for practical applications, thus its transport properties are being actively pursued. Using density functional theory and perturbation analysis,…

材料科学 · 物理学 2015-05-11 Changwon Park , Junga Ryou , Suklyun Hong , Bobby Sumpter , Gunn Kim , Mina Yoon

Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of…

Transition-metal (TM) atom-functionalized nanomaterials are promising candidates for hydrogen storage due to their ability to adsorb multiple hydrogen molecules through Kubas interactions. However, achieving efficient hydrogen desorption at…

材料科学 · 物理学 2025-08-14 Jongdeok Kim , Vikram Mahamiya , Massimiliano Di Ventra , Hoonkyung Lee

The structure, and electrical, mechanical and optical properties of few-layer graphene (FLG) synthesized by chemical vapor deposition (CVD) on a Ni coated substrate were studied. Atomic resolution transmission electron microscope (TEM)…

介观与纳米尺度物理 · 物理学 2010-01-18 Hye Jin Park , Jannik Meyer , Siegmar Roth , Viera Skakalova
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