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相关论文: High mobility dry-transferred CVD bilayer graphene

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Bilayer graphene (BLG) is semiconductor whose band gap and properties can be tuned by various methods such as doping or applying gate voltage. Here, we show how to tune electronic properties of BLG by intercalation of transition metal (TM)…

材料科学 · 物理学 2018-03-14 Srimanta Pakhira , Kevin P. Lucht , Jose L. Mendoza-Cortes

Graphene is considered a promising candidate to replace conventional transparent conductors due to its low opacity, high carrier mobility and flexible structure. Multi-layer graphene or stacked single layer graphenes have been investigated…

介观与纳米尺度物理 · 物理学 2011-12-07 Seunghyun Lee , Kyunghoon Lee , Chang-Hua Liu , Zhaohui Zhong

Post-transfer in-depth morphological characterization of graphene grown by chemical vapor deposition (CVD) is of great importance to evaluate the quality and to understand the origin of defects of the transferred sheets. Herein, a semi-dry…

材料科学 · 物理学 2025-08-22 N. Reckinger , B. Hackens

By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene…

A conversion of AA- to AB-stacking bilayer graphene (BLG) due to interlayer interaction is demonstrated. Two types of interlayer interactions, an attractive and a repulsive, between the Boron and Nitrogen dopant atoms in BLG are found. In…

介观与纳米尺度物理 · 物理学 2022-04-05 Nzar Rauf Abdullah , Hunar Omar Rashid , Chi-Shung Tang , Andrei Manolescu , Vidar Gudmundsson

We studied the interlayer coupling and decoupling of bilayer graphene (BLG) by using spatially resolved electron energy loss spectroscopy (EELS) with a monochromated electron source. We correlated the twist-angle-dependent energy band…

Coherent motion of the electrons in the Bloch states is one of the fundamental concepts of the charge conduction in solid state physics. In layered materials, however, such a condition often breaks down for the interlayer conduction, when…

By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to…

介观与纳米尺度物理 · 物理学 2013-03-04 Pia Juliane Wessely , Frank Wessely , Emrah Birinci , Karsten Beckmann , Bernadette Riedinger , Udo Schwalke

We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic…

介观与纳米尺度物理 · 物理学 2014-10-01 S. Engels , B. Terrés , A. Epping , T. Khodkov , K. Watanabe , T. Taniguchi , B. Beschoten , C. Stampfer

Active control of heat flow is of both fundamental and applied interest in thermal management and energy conversion. Here, we present a fluctuational electrodynamic study of thermal radiation between twisted bilayer graphene (TBLG),…

介观与纳米尺度物理 · 物理学 2021-06-16 Fuwei Yang , Bai Song

Twisted bilayer graphene aligned with hexagonal boron nitride (TBG/hBN) hosts rich topological and correlated quantum phases, such as (fractional) Chern insulators, whose character is dictated by the topology of the moir\'{e} flat band.…

强关联电子 · 物理学 2026-05-01 Huiwen Wang , Wei Jiang

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-generation nano-sized electronic devices. Recently,…

The recent discovery of magic angle twisted bilayer graphene (MATBG), in which two sheets of monolayer graphene are precisely stacked to a specific angle, has opened up a plethora of new opportunities in the field of topology,…

介观与纳米尺度物理 · 物理学 2024-06-06 Roop Kumar Mech , Jean Spièce , Kenji Watanabe , Takashi Taniguchi , Pascal Gehring

The electronic transport properties of epitaxial monolayer graphene (MLG) and hydrogen-intercalated quasi free-standing bilayer graphene (QFBLG) on SiC(0001) are investigated by micro multi-point probes. Using a probe with 12 contacts, we…

介观与纳米尺度物理 · 物理学 2015-06-12 Lucas Barreto , Edward Perkins , Jens Johannsen , Søren Ulstrup , Felix Fromm , Christian Raidel , Thomas Seyller , Philip Hofmann

Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the small size of mechanically exfoliated hBN flakes, electronic…

We study the interfacial thermal conductance of grain boundaries (GBs) between monolayer graphene and hexagonal boron nitride (h-BN) sheets using a combined atomistic approach. First, realistic samples containing graphene/h-BN GBs with…

材料科学 · 物理学 2022-01-03 Haikuan Dong , Petri Hirvonen , Zheyong Fan , Ping Qian , Yanjing Su , Tapio Ala-Nissila

We investigate imaging of moire structures in free-standing twisted bilayer graphene (TBG) carried out by transmission electron microscopy (TEM) in diffraction and in-line Gabor holography modes. Electron diffraction patterns of TBG…

介观与纳米尺度物理 · 物理学 2018-11-30 Tatiana Latychevskaia , Conrad Escher , Hans-Werner Fink

We study ballistic transport in periodically gated bilayer graphene as a candidate for a 2D electronic metamaterial. Our calculations use the equilibrium Green function formalism and take into account quantum corrections to charge density…

介观与纳米尺度物理 · 物理学 2020-03-18 Xianqing Lin , David Tomanek

We investigate interaction effects in transport phenomena in bilayer graphene (BLG). For the minimal conductivity in pristine BLG, we find that the conductivity assumes a constant value in the limit $T\to 0$, with the first correction being…

介观与纳米尺度物理 · 物理学 2013-03-14 Jonathan Lux , Lars Fritz

Cross-planar di-vacancies (CPDVs) within stacked graphene hexagonal boron nitride (h-BN) heterostructures provide stabilized covalent links to bridge adjacent graphene and h-BN sheets. It was shown that the CPDVs serve as focal points for…

材料科学 · 物理学 2015-03-10 Bin Ouyang , Jun Song
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