相关论文: Edge capacitance of a 2D topological insulator

Robustness of helical edge states in 2D topological insulators (TI) against strong interactions remains an intriguing issue. Here, by performing the first sign-free quantum Monte Carlo (QMC) simulation of the Kane-Mele-Hubbard-Rashba model…

The low energy sector of 2D and 3D topological insulators (TIs) exhibits propagating edge states, which has speculated the existence of equilibrium edge currents or edge spin currents. We demonstrate that if the low energy sector of TIs is…

The scientific interest in two-dimensional topological insulators (2D TIs) is currently shifting from a more fundamental perspective to the exploration and design of novel functionalities. Key concepts for the use of 2D TIs in spintronics…

Exploring new topological phenomena and functionalities induced by strong electron correlation has been a central issue in modern condensed-matter physics. One example is a topological insulator (TI) state and its functionality driven by…

The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a…

Varying the quantum-well width in an HgTe/CdTe heterostructure allows to realize normal and inverted semiconducting band structures, making it a prototypical system to study two-dimensional (2D) topological-insulator behavior. We have…

Three-dimensional strong topological insulators (TIs) guarantee the existence of a 2-D conducting surface state which completely covers the surface of the TI. The TI surface state necessarily wraps around the TI's top, bottom, and two…

Kondo insulators combine strong electronic correlations with spin orbit coupling and thereby provide a potential realization of correlated topological insulators. We present model calculations which allow us to study the onset of bulk…

In this work, a quantum dot couples to two helical edge states of a 2D topological insulator through weak tunnelings is studied. We show that if the electron interactions on the edge states are repulsive, with Luttinger liquid parameter $ K…

Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…

Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via…

A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport…

A two-dimensional (2D) topological insulator (TI) exhibits the quantum spin Hall (QSH) effect, in which topologically protected spin-polarized conducting channels exist at the sample edges. Experimental signatures of the QSH effect have…

A two-dimensional topological insulator (2DTI) is guaranteed to have a helical 1D edge mode in which spin is locked to momentum, producing the quantum spin Hall effect and prohibiting elastic backscattering at zero magnetic field. No…

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a…

Recently, the theory of quantized dipole polarization has been extended to account for electric multipole moments, giving rise to the discovery of multipole topological insulators (TIs). Both two-dimensional (2D) quadrupole and…

A two-dimensional quadrupole topological insulator on a square lattice is a typical example of a higher-order topological insulator. It hosts an edge state localized near each of its $90^{\circ}$ corners at an energy $E$ inside the band…

The 2D TI edge states are considered within the Volkov-Pankratov (VP) Hamiltonian. A smooth transition between TI and OI is assumed. The edge states are formed in the total gap of homogeneous 2D material. A pair of these states are of…

We present the model of a quantum dot (QD) consisting of a spherical core-bulk heterostructure made of 3D topological insulator (TI) materials, such as PbTe/Pb$_{0.31}$Sn$_{0.69}$Te, with bound massless and helical Weyl states existing at…

Topological insulator (TI) is an exciting discovery because of its robustness against disorder and interactions. Recently, higher-order TIs have been attracting increasing attention, because they host 1D topologically-protected hinge states…