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Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72,…

介观与纳米尺度物理 · 物理学 2007-05-23 R. Oszwałdowski , J. A. Majewski , T. Dietl

We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…

介观与纳米尺度物理 · 物理学 2021-10-22 Zijin Lei , Erik Cheah , Km Rubi , Maurice E. Bal , Christoph Adam , Rüdiger Schott , Uli Zeitler , Werner Wegscheider , Thomas Ihn , Klaus Ensslin

Recently completely new types of domain walls (DWs) have been discovered in helical magnets, consisting generically of a regular array of {\it pairs} of magnetic vortex lines \cite{Li+12}. Only for special orientations DWs are free of…

材料科学 · 物理学 2014-02-11 Thomas Nattermann

We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure.…

介观与纳米尺度物理 · 物理学 2008-11-04 L. Siddiqui , D. Saha , S. Datta , P. Bhattacharya

We study quantum phase coherence and weak localization (WL) in disordered metals with restricted back-scattering and phenomenologically formulate a large class of unconventional transport mechanisms as modified diffusion processes not…

无序系统与神经网络 · 物理学 2010-08-06 Shimul Akhanjee

Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range…

Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels,…

介观与纳米尺度物理 · 物理学 2019-10-11 G. M. Gusev , Z. D Kvon , E. B. Olshanetsky , N. N. Mikhailov

Electron transport limited by the rotating exchange-potential of domain walls is calculated in the ballistic limit for the itinerant ferromagnets Fe, Co, and Ni. When realistic band structures are used, the domain wall magnetoresistance is…

介观与纳米尺度物理 · 物理学 2009-10-31 Jeroen B. A. N. van Hoof , Kees M. Schep , Arne Brataas , Gerrit E. W. Bauer , Paul J. Kelly

Current induced domain wall (DW) motion has been investigated in a 600-nm wide nanowire using multilayer film with a structure of Ta(5 nm)/Pd(5 nm)/[CoFe(0.4 nm)/Pd(1.2 nm)]$_{15}$/Ta(5 nm)in terms of anomalous Hall effect measurements. It…

介观与纳米尺度物理 · 物理学 2014-07-30 Zhaoliang Meng , Manoj Kumar , Jinjun Qiu , Guchang Han , Kie Leong Teo , Duc-The Ngo

Starting from a simple microscopic model, we have derived a kinetic equation for the matrix distribution function. We employed this equation to calculate the conductance $G$ in a mesoscopic F'/F/F' structure with a domain wall (DW). In the…

材料科学 · 物理学 2009-11-07 F. S. Bergeret , A. F. Volkov , K. B. Efetov

The dynamics of a domain wall driven by a spin-polarized current in a mesoscopic system is studied numerically. Spin-mixing in the states of the conduction electrons is fully taken into account. When the Fermi energy of the electrons is…

介观与纳米尺度物理 · 物理学 2009-11-11 Jun-ichiro Ohe , Bernhard Kramer

We report on the comprehensive numerical study of the fluctuation and correlation properties of wave functions in three-dimensional mesoscopic diffusive conductors. Several large sets of nanoscale samples with finite metallic conductance,…

介观与纳米尺度物理 · 物理学 2009-11-07 Branislav K. Nikolic , Viktor Z. Cerovski

Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…

介观与纳米尺度物理 · 物理学 2016-10-11 Ke Wang , Takashi Taniguchi , Kenji Watanabe , Philip Kim

Advances with trapped ultracold atoms intensified interest in simulating complex physical phenomena, including quantum magnetism and transitions from itinerant to non-itinerant behavior. Here we show formation of antiferromagnetic ground…

量子气体 · 物理学 2016-08-30 Constantine Yannouleas , Benedikt B. Brandt , Uzi Landman

We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime. Using a pair of electrostatic gates we were able to move the Fermi level into the…

介观与纳米尺度物理 · 物理学 2015-05-18 Ivan Knez , R. R. Du , Gerard Sullivan

Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…

Quantum conductance fluctuations are investigated in disordered 3D topological insulator quantum wires. Both experiments and theory reveal a new transport regime in a mesoscopic conductor, pseudo-ballistic transport, for which ballistic…

The ferromagnetic phase of Co$_3$Sn$_2$S$_2$ is widely considered to be a topological Weyl semimetal, with evidence for momentum-space monopoles of Berry curvature from transport and spectroscopic probes. As the bandstructure is highly…

介观与纳米尺度物理 · 物理学 2022-06-01 Changmin Lee , Praveen Vir , Kaustuv Manna , Chandra Shekhar , J. E. Moore , M. A. Kastner , Claudia Felser , Joseph Orenstein

We study theoretically the dynamics of composite domain walls (DW) in multiferroic material GdFeO${}_3$ driven by magnetic field $H$. Two antiferromagnetic orders of Fe and Gd spins interact Gd-ion displacement in this system with coupling…

介观与纳米尺度物理 · 物理学 2020-12-29 Koji Kawahara , Hirokazu Tsunetsugu

Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically…