相关论文: Construction of Fixed Rate Non-Binary WOM Codes ba…
Recent developments in storage -- especially in the area of resistive random access memory (ReRAM) -- are attempting to scale the storage density by regarding the information data as two-dimensional (2D), instead of one-dimensional (1D).…
The huge amount of data produced in the fifth-generation (5G) networks not only brings new challenges to the reliability and efficiency of mobile devices but also drives rapid development of new storage techniques. With the benefits of fast…
In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…
Resistive memories are considered a promising memory technology enabling high storage densities with in-memory computing capabilities. However, the readout reliability of resistive memories is impaired due to the inevitable existence of…
Non-binary (NB) low-density parity-check (LDPC) codes are graph-based codes that are increasingly being considered as a powerful error correction tool for modern dense storage devices. The increasing levels of asymmetry incorporated by the…
Modern dense Flash memory devices operate at very low error rates, which require powerful error correcting coding (ECC) techniques. An emerging class of graph-based ECC techniques that has broad applications is the class of…
In this paper, we propose novel modulation concepts that we call weak composition modulation (WCM) and composition modulation (CM). We use weak and strict compositions of an integer to form codewords of WCM and CM, respectively. For the…
This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for…
In this work, we study a new model of defect memory cells, called partially stuck-at memory cells, which is motivated by the behavior of multi-level cells in non-volatile memories such as flash memories and phase change memories. If a cell…
The pivotal storage density win achieved by solid-state devices over magnetic devices recently is a result of multiple innovations in physics, architecture, and signal processing. Constrained coding is used in Flash devices to increase…
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips.…
A construction using the E8 lattice and Reed-Solomon codes for error-correction in flash memory is given. Since E8 lattice decoding errors are bursty, a Reed-Solomon code over GF($2^8$) is well suited. This is a type of coded modulation,…
Consider an assignment of bits to the vertices of a connected graph $\Gamma(V, E)$ with the property that the value of each vertex is a function of the values of its neighbors. A collection of such assignments is called a storage code of…
We propose efficient coding schemes for two communication settings: 1. asymmetric channels, and 2. channels with an informed encoder. These settings are important in non-volatile memories, as well as optical and broadcast communication. The…
Local rank modulation scheme was suggested recently for representing information in flash memories in order to overcome drawbacks of rank modulation. For $s\leq t\leq n$ with $s|n$, $(s,t,n)$-LRM scheme is a local rank modulation scheme…
In digital circuits, a Flip-Flop (FF) is a circuit element that has two stable states which can be used to store and remember state information. The state of the circuit can be changed by applying signals to the control input. FFs are the…
We present a construction of one-time memories (OTMs) using classical-accessible stateless hardware, building upon the work of Broadbent et al. and Behera et al.. Unlike the aforementioned work, our approach leverages quantum random access…
Computing-in-memory (CIM) has attracted significant attentions in recent years due to its massive parallelism and low power consumption. However, current CIM designs suffer from large area overhead of small CIM macros and bad programmablity…
An ultra fast bit addressing scheme for magnetic random access memories (MRAM) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by sub nanosecond field pulses making use of the…
In this paper, we consider a multiple-input-multiple-output optical wireless communication (MIMO-OWC) system in the presence of log-normal fading. In this scenario, a general criterion for the design of full-diversity space code (FDSC) with…