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We present here the minimal tight--binding model for a single layer of transition metal dichalcogenides (TMDCs) MX$_{2}$ (M--metal, X--chalcogen) which illuminates the physics and captures band nesting, massive Dirac Fermions and Valley…

材料科学 · 物理学 2023-05-05 M. Bieniek , M. Korkusiński , L. Szulakowska , P. Potasz , I. Ozfidan , P. Hawrylak

We present $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians parametrised by {\it ab initio} density functional theory calculations to describe the dispersion of the valence and conduction bands at their extrema (the $K$, $Q$, $\Gamma$, and $M$…

介观与纳米尺度物理 · 物理学 2015-04-07 Andor Kormányos , Guido Burkard , Martin Gmitra , Jaroslav Fabian , Viktor Zólyomi , Neil D. Drummond , Vladimir Fal'ko

The lack of inversion symmetry in semiconducting transition metal dichalcogenide monolayers (TMDMs) enables a considerable molecular-level intrinsic piezoelectricity, which opens prospects for atomically-thin piezotronics and…

介观与纳米尺度物理 · 物理学 2018-09-12 Yunhua Wang , Zongtan Wang , Jie Li , Jie Tan , Biao Wang , Yulan Liu

Transition metal dichalcogenides (TMDs) are promising candidates for a wide variety of ultrascaled electronic, quantum computation, and optoelectronic applications. The exponential decay of electronic density of states into the bandgap,…

介观与纳米尺度物理 · 物理学 2023-08-04 Prasad Sarangapani , James Charles , Tillmann Kubis

Monolayer transition metal dichalcogenides $MX_2$ ($M$ = Mo,W and $X$ = Te, Se, S) in 1T' structure were predicted to be quantum spin Hall insulators based on first-principles calculations, which were quickly confirmed by multiple…

材料科学 · 物理学 2021-08-04 Mengli Hu , Guofu Ma , Chun Yu Wan , Junwei Liu

We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides $MX_2$ ($M$=Mo, W; $X$=S, Se, Te). As the conduction and valence band edges are predominantly…

材料科学 · 物理学 2014-03-07 Gui-Bin Liu , Wen-Yu Shan , Yugui Yao , Wang Yao , Di Xiao

Rich valleytronics and diverse defect-induced or interlayer pre-bandgap excitonics have been extensively studied in transition metal dichalcogenides (TMDCs), a system with fascinating optical physics. However, more intense high-energy…

材料科学 · 物理学 2021-04-02 Jinhua Hong , Masanori Koshino , Ryosuke Senga , Thomas Pichler , Hua Xu , Kazu Suenaga

This paper presents a theoretical description of both the valley Zeeman effect (g-factors) and Landau levels in two-dimensional H-phase transition metal dichalcogenides (TMDs) using the Luttinger-Kohn approximation with spin-orbit coupling.…

材料科学 · 物理学 2020-08-26 Fengyuan Xuan , Su Ying Quek

The optical response of two-dimensional (2D) materials has been customarily calculated ab initio using plane waves and without separating the most important orbitals contributions. In the family of transition metal dichalcogenides (TMDC)…

介观与纳米尺度物理 · 物理学 2025-12-30 Angiolo Huamán

Monolayer transition metal dichalcogenides (TMDs) bare large Berry curvature hotspots readily exploitable for geometric band effects. Tailoring and enhancement of these features via strain is an active research direction. Here, we consider…

材料科学 · 物理学 2019-10-08 Shahnaz Aas , Ceyhun Bulutay

Monolayers of transition metal dichalcogenides (TMDCs) exhibit an exceptionally strong Coulomb interaction between charge carriers due to the two-dimensional carrier confinement in connection with weak dielectric screening. High densities…

介观与纳米尺度物理 · 物理学 2018-08-08 D. Erben , A. Steinhoff , G. Schönhoff , T. O. Wehling , C. Gies , F. Jahnke

The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting,…

Excitons in monolayer transition-metal dichalcogenides (TMDs) have garnered significant attention because of their large binding energies due to weakly screened Coulomb interaction, and direct bandgap at the K/K$^\prime$ point in the…

We present a detailed theoretical investigation on the electronic transport properties of $n$-type monolayer (ML) transition metal dichalcogenides (TMDs) at low temperature in the presence of proximity-induced interactions such as Rashba…

介观与纳米尺度物理 · 物理学 2024-11-05 J. Liu , W. Xu , Y. M. Xiao , L. Ding , H. W. Li , B. Van Duppen , M. V. Milošević , F. M. Peeters

We provide a comprehensive analysis of the prominent tight-binding (TB) models for transition metal dichalcogenides (TMDs) available in the literature. We inspect the construction of these TB models, discuss their parameterization used and…

材料科学 · 物理学 2024-06-25 Bert Jorissen , Lucian Covaci , Bart Partoens

The electronic and thermoelectric properties of one to four monolayers of MoS$_{2}$, MoSe$_{2}$, WS$_{2}$, and WSe$_{2}$ are calculated. For few layer thicknesses,the near degeneracies of the conduction band $K$ and $\Sigma$ valleys and the…

材料科学 · 物理学 2014-04-03 Darshana Wickramaratne , Ferdows Zahid , Roger K. Lake

Monolayers of transition metal dichalcogenides (TMDCs) feature exceptional optical properties that are dominated by excitons, tightly bound electron-hole pairs. Forming van der Waals heterostructures by deterministically stacking individual…

Manipulating materials properties far from equilibrium recently garnered significant attention, with experimental emphasis on transient melting, enhancement, or induction of electronic order. A more tantalizing aspect of the matter-light…

材料科学 · 物理学 2016-10-28 Martin Claassen , Chunjing Jia , Brian Moritz , Thomas P. Devereaux

We investigate the proximity-induced exchange coupling in transition-metal dichalcogenides (TMDCs), originating from spin injector geometries composed of hexagonal boron-nitride (hBN) and ferromagnetic (FM) cobalt (Co) or nickel (Ni), from…

介观与纳米尺度物理 · 物理学 2020-02-12 Klaus Zollner , Paulo E. Faria Junior , Jaroslav Fabian

Monolayer transition metal dichalcogenides (TMDCs) are direct gap semiconductors with unique potential for ultrathin light emitters. Yet, their photoluminescence (PL) is not completely understood. We compute the radiative recombination rate…

材料科学 · 物理学 2018-07-20 Hsiao-Yi Chen , Maurizia Palummo , Davide Sangalli , Marco Bernardi
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