相关论文: Investigation of Dependence between Time-zero and …

The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).

Burn-in is accepted as a way to evaluate ageing effects in an accelerated manner. It has been suggested that burn-in stress may have a significant effect on the Negative Bias Temperature Instability (NBTI) of subthreshold CMOS circuits.…

The assessment of noise margins and the related probability of failure in digital cells has growingly become essential, as nano-scale CMOS and FinFET technologies are confronting reliability issues caused by aging mechanisms, such as NBTI,…

Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as an irreducible part of the design problem and use different…

Memory designs require timing margins to compensate for aging and fabrication process variations. With technology downscaling, aging mechanisms became more apparent, and larger margins are considered necessary. This, in return, means a…

This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demonstrated that MS induces a positive Vth shift in the device…

With the downscaling of MOSFETs to nanometer dimensions, transistor electrical parameter variability is produced by factors other than variations of physical dimensions and doping profiles, which are there since device fabrication and…

Dielectric layers are gradually being down-scaled in different electronic devices like MOSFETs and Magnetic Tunnel Junctions (MTJ) with shrinking device sizes. As a result, time dependent dielectric breakdown (TDDB) has become a major issue…

After nearly half a century of research into the bias temperature instability (BTI), two classes of models have emerged as the strongest contenders: one class of models, the reaction-diffusion models, is built around the idea that hydrogen…

This paper studies the problem of verifying dissipativity of linear time-invariant (LTI) systems using input-output data. We leverage behavioral systems theory to express dissipativity in terms of quadratic difference forms (QDFs), allowing…

In this study, a time fractional dual-phase-lag model with temperature jump boundary condition as a choice for the Fourier's law replacement in thermal modeling of transistors, is utilized. In more details, the numerical simulation of heat…

Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise…

In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-k and…

We study a two-dimensional fermionic QFT used to model 1D strongly correlated electrons in the presence of a time-dependent impurity that drives the system out of equilibrium. In contrast to previous investigations, we consider a dynamic…

Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge of the exact values for the ITCs is required in order to perform accurate and predictive compact model simulations of their…

At the 3 GeV ring of the MAX IV Laboratory, a fourth generation ring-based synchrotron light source, an asymmetric influence of the sign of the amplitude-dependent tune shift (ADTS) on the transverse mode-coupling instability (TMCI) has…

We have found that the conduction in Si-MOS structures has a substantial imaginary component in the metallic phase for the density range 6 \times n_c > n > n_c, where n_c is the critical density of the metal-insulator transition. For high…

The effects of sampling rate and total measurement time have been determined for single-point measurements of step fluctuations within the context of first-passage properties. Time dependent STM has been used to evaluate step fluctuations…

The Rayleigh-Taylor Instability (RTI) in compressible flow with inter-molecular interactions is probed via the Discrete Boltzmann Method (DBM). The effects of interfacial tension, viscosity and heat conduction are investigated. It is found…

A time-dependent bias voltage on a tunnel junction generates a time-dependent modulation of its current fluctuations, and in particular of its variance. This translates into an excitation at frequency $\tilde{f}$ generating correlations…