相关论文: Field-effect transistors of high-mobility few-laye…

We report a comprehensive study on the electronic transport properties of SrZn2Ge2 single crystals. The electrical resistivity of the compound exhibits metallic behavior, following a T^2 dependence below 35 K, consistent with the Fermi…

Pd$_3$Bi$_2$Se$_2$ is a rare realization of a superconducting metal with a non-zero $Z_2$ topological invariant. We report the growth of high-quality single crystals of layered Pd$_3$Bi$_2$Se$_2$ with a superconducting transition at $T_c$ ~…

We study how the non-Fermi-liquid two-phase state reveals itself in transport properties of high-mobility Si-MOSFETs. We have found features in zero-field transport, magnetotransport, and thermodynamic spin magnetization in a 2D correlated…

We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…

We investigate the thermodynamic properties of FeSe under the in-plane magnetic fields using torque magnetometry, specific heat, magnetocaloric measurements. Below the upper critical field Hc2, we observed the field-induced anomalies at H1…

2H-NbSe2 is known to be an archetype layered transitional metal dichalcogenide superconductor with a superconducting transition temperature of 7.3 K.In this article, we investigate the influence of Sn intercalation on superconducting…

Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…

We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties…

The bulk tin selenide (SnSe) is the best thermoelectric material currently with the highest figure-of-merit due to the strong phonon-phonon interactions. We investigate the effect of electron-phonon coupling (EPC) on the transport…

The thermal conductivity of the layered s-wave superconductor NbSe_2 was measured down to T_c/100 throughout the vortex state. With increasing field, we identify two regimes: one with localized states at fields very near H_c1 and one with…

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different…

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance…

Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical…

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no…

The carrier mobility \mu of few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, \mu reaches…

Transition metal dichalcogenides have received much attention in the past decade not only due to the new fundamental physics, but also due to the emergent applications in these materials. Currently chalcogenide deficiencies in TMDs are…

The thermal conductivity of the iron-based superconductor FeSe was measured at temperatures down to 50 mK in magnetic fields up to 17 T. In zero magnetic field, the electronic residual linear term in the T = 0 limit, \kappa_0/T, is…

Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains under-explored for 2D electronics due to ambient instability and predominantly p-type Fermi…

We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS$_2$. Upon electron accumulation, at surface densities close to -or just larger than- 10$^{14}$ cm$^{-2}$,…

Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properties in few-layer MoSe$_2$ field-effect transistors (FETs)…