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The stacked two layered materials with a lattice constant mismatch and/or with twist angle relative to each other can create a moir\'e pattern, modulating the electronic properties of the pristine materials. Here, we combine scanning…

Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes…

A periodic spatial modulation, as created by a moir\'e pattern, has been extensively studied with the view to engineer and tune the properties of graphene. Graphene encapsulated by hexagonal boron nitride (hBN) when slightly misaligned with…

介观与纳米尺度物理 · 物理学 2020-01-31 M. Anđelković , S. P. Milovanović , L. Covaci , F. M. Peeters

We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV, and is robust to…

材料科学 · 物理学 2015-05-20 Ashwin Ramasubramaniam , Doron Naveh , ELias Towe

The bandgap of MoS2 is highly strain-tunable which results in the modulation of its electrical conductivity and manifests itself as the piezoresistive effect while a piezoelectric effect was also observed in odd-layered MoS2 with broken…

介观与纳米尺度物理 · 物理学 2015-07-22 Sajedeh Manzeli , Adrien Allain , Amirhossein Ghadimi , Andras Kis

We report on the successful synthesis and low-temperature electron transport investigations of a new form of material - Bi2O2Se semiconducting nanowires. Gate-tunable 0- and $\pi$-h/e (h is the Planck constant and e the elementary charge)…

介观与纳米尺度物理 · 物理学 2019-12-20 Jianghua Ying , Guang Yang , Zhaozheng Lyu , Guangtong Liu , Zhongqing Ji , Jie Fan , Changli Yang , Xiunian Jing , Huaixin Yang , Li Lu , Fanming Qu

Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence…

Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated for semiconductor chip fabrication processes and transistor…

One of the enduring challenges in graphene research and applications is the extreme sensitivity of its charge carriers to external perturbations, especially those introduced by the substrate. The best available substrates to date, graphite…

介观与纳米尺度物理 · 物理学 2015-04-29 Chih-Pin Lu , Guohong Li , K. Watanabe , T. Taniguchi , Eva Y. Andrei

Heterostructures made from van der Waals materials provide a template to investigate proximity effects at atomically sharp heterointerfaces. In particular, near-field charge and energy transfer in heterostructures made from semiconducting…

In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…

介观与纳米尺度物理 · 物理学 2024-07-17 Priyanka Sinha , Prasanta K. Panigrahi , Bheemalingam Chittari

Two dimensional materials and their heterostructures constitute a promising platform to study correlated electronic states as well as many body physics of excitons. Here, we present experiments that unite these hitherto separate efforts and…

介观与纳米尺度物理 · 物理学 2020-05-12 Yuya Shimazaki , Ido Schwartz , Kenji Watanabe , Takashi Taniguchi , Martin Kroner , Ataç Imamoğlu

Van der Waals heterostructures have recently garnered interest for application in high-performance photovoltaic materials. Consequently, understanding the basic electronic characteristics of these heterostructures is important for their…

计算物理 · 物理学 2019-10-07 Maolin Bo , Hanze Li , Zhongkai Huang , Lei Li , Chuang Yao

Stacking monolayer semiconductors results in moir\'e patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate…

Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2…

Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer…

Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can…

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The…

We investigate WSe$_2$-MoSe$_2$ heterobilayers with different twist angles $\theta \pm \delta$ between the two layers, by low-frequency Raman scattering. In sufficiently aligned samples with $\theta=0^\circ$, or $\theta=60^\circ$, and…

The optical properties of two-dimensional transition metal dichalcogenide monolayers such as MoS$_2$ or WSe$_2$ are dominated by excitons, Coulomb bound electron-hole pairs. Screening effects due the presence of hexagonal-BN surrounding…

材料科学 · 物理学 2018-12-26 Iann C. Gerber , Xavier Marie