相关论文: Valley-Selective Topological Ordered States in Irr…

We describe the gated bilayer graphene system when it is subjected to intense terahertz frequency electromagnetic radiation. We examine the electron band structure and density of states via exact diagonalization methods within Floquet…

Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because…

Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…

We theoretically investigate the trARPES spectrum and optical Hall conductivity in periodically driven twisted bilayer graphene, considering both steady-state and "projected" occupations of the Floquet state. In periodically driven…

We theoretically studied the Floquet state of gated bilayer graphene, which is irradiated by normally incident focused Gaussian beam with orbital angular momentum (OAM). According to the Floquet theory, in-plane and out-of-plane electric…

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their…

We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear…

An established way of realizing topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene…

Previous works on deformed graphene predict the existence of valley-polarized states, however, optimal conditions for their detection remain challenging. We show that in the quantum Hall regime, edge-like states in strained regions can be…

Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these…

We theoretically investigated the Floquet states of bilayer graphene heterostructure under the irradiation by horizontally incident circular polarized light. The in-plane and out-of-plane electric field of the light periodically perturbs…

Because of its large density-of-states and the 2{\pi} Berry phase near its low-energy band-contact points, neutral bilayer graphene (BLG) at zero magnetic field (B) is susceptible to chiral-symmetry breaking, leading to a variety of gapped…

In the presence of a circularly polarized mid-infrared radiation graphene develops dynamical band gaps in its quasi-energy band structure and becomes a Floquet insulator. Here we analyze how topologically protected edge states arise inside…

While single-layer graphene shows extraordinary phenomena which are stable against electronic interactions, the non-interacting state of bilayer graphene is unstable to infinitesimal interactions leading to one of many possible exotic…

We investigate the electronic confinement in bilayer graphene by topological loops of different shapes. These loops are created by lateral gates acting via gap inversion on the two graphene sheets. For large-area loops the spectrum is well…

Trilayer graphene exhibits valley-protected gapless states when the stacking order changes from ABC to CBA and a gate voltage is applied to outer layers. Some of these states survive strong distortions of the trilayer. For example, they…

We show nonlinear transport experiments on clean, suspended bilayer graphene that reveal a gap in the density of states. Looking at the evolution of the gap in magnetic fields of different orientation, we find that the groundstate is a…

We derive the angular generation density of photoexcited carriers in gapless and gapped Bernal bilayer graphene. Exploiting the strong anisotropy of the band structure of bilayer graphene at low energies due to trigonal warping, we show…

Chirally stacked N-layer graphene systems with N >= 2 exhibit a variety of distinct broken symmetry states in which charge density contributions from different spins and valleys are spontaneously transferred between layers. We explain how…

Using mean-field theory, we determine the electronic phase diagram of undoped AB-stacked bilayer graphene in the presence of a transverse electric field. In addition to multiple competing electronic instabilities characterized by excitonic…