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Two-dimensional group IV transition-metal dichalcogenides have encouraging thermoelectric applications since their electronic and lattice properties can be manipulated with strain. In this paper, we report the thermoelectric parameters such…

材料科学 · 物理学 2020-01-29 Ransell D'Souza , Sugata Mukherjee , Sohail Ahmad

Strain engineering has been used to modify materials properties in ferroelectric, superconducting, and ferromagnetic thin films. The advantage of strain engineering is that it can achieve unexpected enhancement in certain properties, such…

超导电性 · 物理学 2008-08-11 R. Zeng S. X. Dou , L. Lu , W. X. Li , J. H. Kim , P. Munroe , R. K. Zheng , S. P. Ringer

We use the modified Becke-Johnson exchange potential (mBJ) with the spin-orbit coupling effect (SOC) to study effects of biaxial strain and local constant potential on electronic structure of monolayer SnSe. Our results show the fundamental…

材料科学 · 物理学 2020-02-20 Feng Sun , Ting Luo , Lin Li , Aijun Hong , Cailei Yuan , Wei Zhang

Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of two-dimensional semiconductors like molybdenum disulfide (MoS2). Although several theoretical works predicted that biaxial strain would…

应用物理 · 物理学 2021-05-11 Felix Carrascoso , Riccardo Frisenda , Andres Castellanos-Gomez

The newly emerging monolayer phosphorene was recently predicted to be a promising thermoelectric material. In this work, we propose to further enhance the thermoelectric performance of phosphorene by the strain-induced band convergence. The…

介观与纳米尺度物理 · 物理学 2015-06-22 H. Y. Lv , W. J. Lu , D. F. Shao , Y. P. Sun

Strain engineering applied to carbon monosulphide monolayers allows to control the bandgap, controlling electronic and thermoelectric responses. Herein, we study the semiconductor-metal phase transition of this layered material driven by…

介观与纳米尺度物理 · 物理学 2019-02-05 Jhon W. González

The electronic, phonon, and thermoelectric properties of a two-dimensional HfS2 monolayer are investigated by using the first-principles calculations combined with the Boltzmann transport theory. The band valleys of the HfS2 monolayer can…

介观与纳米尺度物理 · 物理学 2016-08-22 H. Y. Lv , W. J. Lu , X. Luo , H. Y. Lu , X. B. Zhu , Y. P. Sun

Surface and strain engineering are among the cheaper ways to modulate structure property relations in materials. Due to their compositional flexibilities, MXenes, the family of two-dimensional materials, provide enough opportunity for…

材料科学 · 物理学 2024-03-21 Himanshu Murari , Swati Shaw , Subhradip Ghosh

Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes…

Manipulating the optical and quantum properties of two-dimensional (2D) materials through strain engineering is not only fundamentally interesting but also provides significant benefits across various applications. In this work, we employ…

材料科学 · 物理学 2025-09-23 Nguyen Tuan Hung , Vuong Van Thanh , Mingda Li , Takahiro Shimada

Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile…

One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable…

材料科学 · 物理学 2018-06-29 Paul Z. Hanakata , A. S. Rodin , Harold S. Park , David K. Campbell , A. H. Castro Neto

This paper investigates strain effects on the electronic and optical properties of monolayer GaSe using first-principles calculations. The deformation significantly alters energy dispersion, band gap, and the band edge states of GaSe. The…

材料科学 · 物理学 2023-01-03 Vo Khuong Dien , Nguyen Thi Han , Wei-Bang Li , Kuang-I Lin , Ming-Fa Lin

Rashba spin-orbit coupling significantly modifies the electronic band structure in two-dimensional (2D) van der Waals (vdW) heterobilayers, which may enhance their thermoelectric (TE) properties. In this study, we use first-principles…

材料科学 · 物理学 2025-04-24 Vuong Van Thanh , Nguyen Tuan Hung

Recent developments in the 2D materials laid emphasis on finding the materials with robust properties for variety of applications including the energy harvesting. The recent discovery of Janus monolayers with broken symmetry has opened up…

材料科学 · 物理学 2024-03-05 Anuja Kumari , Abhinav Nag , Santanu K. Maiti , Jagdish Kumar

Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has…

We investigate the effects of the in-plane biaxial strain and charge doping on the charge density wave (CDW) order of monolayer $1T$-TiSe$_2$ by using the first-principles calculations. Our results show that the tensile strain can…

材料科学 · 物理学 2017-10-11 M. J. Wei , W. J. Lu , R. C. Xiao , H. Y. Lv , P. Tong , W. H. Song , Y. P. Sun

In a recent paper [R. Soto-Garrido and E. Mu\~noz, J. Phys. Condens. Matter 30, 195302 (2018)], we studied the electronic transport properties in Weyl semimetals (WSMs) submitted to the combined effects of torsional mechanical strain and…

介观与纳米尺度物理 · 物理学 2018-12-07 Enrique Muñoz , Rodrigo Soto-Garrido

Strain engineering can effectively tune the electronic, topological and piezoelectric properties of materials. In this work, the small strain (-4\% to 4\%) effects on piezoelectric properties of $\alpha$-AsP monolayer are studied by density…

材料科学 · 物理学 2019-10-22 San-Dong Guo , Xiao-Shu Guo , Ya-Ying Zhang , Kui Luo

Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily applied in a controlled way, e.g., by bending of a flexible…

介观与纳米尺度物理 · 物理学 2015-10-01 G. Plechinger , A. Castellanos-Gomez , M. Buscema , H. S. J. van der Zant , G. A. Steele , A. Kuc , T. Heine , C. Schüller , T. Korn