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Facilitated by recent advances in strained Ge/SiGe quantum well (QW) growth technology, superconductor-semiconductor hybrid devices based on group IV materials have been developed, potentially augmenting the functionality of quantum…

超导电性 · 物理学 2025-09-18 Hao Li , Zhongxia Shang , Michael P. Lilly , Maksym Myronov , Leonid P. Rokhinson

Thin films of (1-x)BiFeO<sub>3</sub>-xPbTiO<sub>3</sub> (BF-xPT) with x ~ 0.60 were fabricated on Pt/Si substrates by chemical solution deposition of precursor BF and PT layers alternately in three different multilayer configurations. These…

The build up of polyelectrolyte multilayers (PEMs) was observed by a silicon-on-insulator (SOI) based thin film resistor. Differently charged polyelectrolytes adsorbing to the sensor surface result in defined potential shifts, which…

软凝聚态物质 · 物理学 2007-05-23 Petra A. Neff , Ali Naji , Christof Ecker , Bert Nickel , Regine von Klitzing , Andreas R. Bausch

PbSe, a predicted two-dimensional (2D) topological crystalline insulator (TCI) in the monolayer limit, possess excellent thermoelectric and infrared optical properties. Native defects in PbSe take a crucial role for the applications.…

材料科学 · 物理学 2023-08-24 Qiwei Tian , Ping Li , Li Zhang , Yuan Tian , Long-Jing Yin , Lijie Zhang , Zhihui Qin

Thin films of noble-metal-based transition metal dichalcogenides, such as PtSe$_2$, have attracted increasing attention due to their interesting layer-number dependent properties and application potential. While it is difficult to cleave…

The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…

Polydimethylsiloxane (PDMS) films possess different chemical and physical properties based on surface modification. The bond structure of pristine PDMS films and plasma treated PDMS films differ in a particular region of silicate bonds. We…

应用物理 · 物理学 2017-07-10 Amit R. Morarka , Aditee C. Joshi

(Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were grown on IrO2 and Pt coated Si substrates. Film on Pt electrode showed large dielectric dispersion at lower frequency and on other hand film on IrO2 showed dielectric constant almost independent…

材料科学 · 物理学 2010-04-19 Y. K. Vayunandana Reddy , Jerome Wolfman , Monique Gervais , Francois Gervais

We have studied the processing of piezoelectric thick films using electrophoretic deposition (EPD) for high-frequency ultrasound applications. Lead-zirconium-titanate (PZT) particles synthetized by solid states synthesis were dispersed in…

Bismuth (Bi) having a large atomic number is characterized by the strong spin-orbit coupling (SOC) and is a parent compound of many 3D topological insulators (TIs). The ultrathin Bi films are supposed to be 2D TIs possessing the nontrivial…

强关联电子 · 物理学 2023-01-16 Natalia Kovaleva , Dagmar Chvostova , Ladislav Fekete , Alexandr Dejneka

Optoelectronics based on metal halide perovskites (MHPs) have shown substantial promise, following more than a decade of research. For prime routes of commercialization such as tandem solar cells, optical modeling is essential for…

应用物理 · 物理学 2023-05-24 Christopher G. Bailey , Giacomo M. Piana , Pavlos G. Lagoudakis

We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH$_{3}$) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P…

材料科学 · 物理学 2007-05-23 N. J. Curson , S. R. Schofield , M. Y. Simmons , L. Oberbeck , J. L. O'Brien , R. G. Clark

In spectroscopic ellipsometry, the optical properties of materials are obtained indirectly by generally assuming dielectric function and optical models. This ellipsometry analysis, which typically requires numerous model parameters, has…

Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 ohm.cm and 0.02 ohm.cm) in hydrofluoric (HF) acid of 24.5 precent…

材料科学 · 物理学 2016-12-16 Oday A. Al-Owaedi

Very thin (1.2-2.5nm) self-assembled organic dielectric monolayers have been integrated into organic thin-film diode to achieve electrical characteristics. These dielectrics are fabricated by self-assembling deposition, resulting in smooth,…

材料科学 · 物理学 2007-08-13 C. Trapes , V. Gadenne , L. Rouaï

We report the growth of atomically smooth, single crystalline Bi2Se3 thin films on Si(111) by using molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, X-ray photoelectron emission spectroscopy and Raman…

介观与纳米尺度物理 · 物理学 2010-05-03 Guanhua Zhang , Huajun Qin , Jing Teng , Jiandong Guo , Qinlin Guo , Xi Dai , Zhong Fang , Kehui Wu

We report on the use of time-resolved optical ellipsometry to monitor the deposition of single atomic layers with subatomic sensitivity. Ruddlesden-Popper thin films of SrO(SrTiO3)n=4 were grown by means of metalorganic aerosol deposition…

The phototransport properties of plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon films were studied by measuring the steady state photoconductivity (SSPC) as a function of temperature and light intensity.…

材料科学 · 物理学 2011-11-09 Sanjay K. Ram , Satyendra Kumar

Single crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism etc. that have the potential for completely new electronic applications…

Silicon-based two-dimensional (2D) materials, including well-known silicene, have garnered considerable attention due to their potential in advanced electronic and optoelectronic applications. Here, we introduce a novel 2D silicon variant,…

材料科学 · 物理学 2023-11-02 K. A. L. Lima , L. A. Ribeiro